2SD1815 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:ENN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. Exclle

Ordering number:EN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]Features Low collector-to-emitter saturation voltage. Excllent linearity of hFE.

Ordering number : EN2539C2SB1215/2SD1815Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 3A, Low VCE sat PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR (NPN) TO-252-2L FEATURES Low Collector-to-Emitter Saturation Voltage 1. BASE Excllent Linearity of hFE High fT 2. COLLECTOR Fast Switching Time 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise note)Symbol Parameter Value UnitVCBO Collector-

SMD Type TransistorsNPN Transistors2SD1815TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High fT.0.80-0.1max Complementary to 2SB1215+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Rati

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1815DESCRIPTIONExcellent linearity of hFESmall and slim package making it easy to make 2SD1815/2SB1215-used set smallerLow collector-to-emitter saturation voltageHigh fTFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT

Ordering number:EN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]Features Low collector-to-emitter saturation voltage. Good linearity o

Ordering number:EN2369ANPN Epitaxial Planar Silicon Transistor2SD1817Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers. unit:mm2045BFeatures [2SD1817]6.5 High DC current gain. 2.35.00.54 Small and slim package permitting the 2SD1817-applied sets to be made more compact.0.850.71.21 : Base0.60.52 : Co

Ordering number:ENN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]6.52.35.00.54Features Low collector-to-emitter saturation voltag

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 11: BaseTypical Applications 2 : Collector3: Emitter

Transistor2SD1819ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1218A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2

Transistor2SD1819ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1218A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2

UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). AL Complementary to 2SB1218A 33 Top View C B11 22APPLICATION K E General purpose amplification. DH

SMD Type TransistorsNPN Transistors2SD1819A Features Low Collector-to-Emitter Saturation Voltage High foward current transfer ratio hFE. Complementary to 2SB1218A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO

SMD Type TransistorsNPN Transistors2SD1816TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed High fT. 0.127+0.10.80-0.1max Complementary to 2SB1216+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratin

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1816DESCRIPTIONExcellent linearity of hFESmall and slim package facilitating compactness of setsLow collector-to-emitter saturation voltageHigh fTFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,H

isc NPN Epitaxial Planar Silicon Transistor 2SD1817DESCRIPTIONHigh DC current gainCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max) @I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and othergeneral