2SD1816Q
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1816Q
Código: 2SD1816L_2SD1816G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Capacitancia de salida (Cc): 40
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO251
TO252
TO220F
Búsqueda de reemplazo de transistor bipolar 2SD1816Q
2SD1816Q
Datasheet (PDF)
7.1. Size:152K sanyo
2sd1816.pdf 
Ordering number:EN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]Features Low collector-to-emitter saturation voltage. Good linearity o
7.2. Size:60K sanyo
2sb1216 2sd1816.pdf
Ordering number:ENN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]6.52.35.00.54Features Low collector-to-emitter saturation voltag
7.3. Size:504K onsemi
2sb1216 2sd1816.pdf
2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 11: BaseTypical Applications 2 : Collector3: Emitter
7.4. Size:268K utc
2sd1816.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2
7.5. Size:1132K kexin
2sd1816.pdf
SMD Type TransistorsNPN Transistors2SD1816TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed High fT. 0.127+0.10.80-0.1max Complementary to 2SB1216+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratin
7.6. Size:228K inchange semiconductor
2sd1816.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1816DESCRIPTIONExcellent linearity of hFESmall and slim package facilitating compactness of setsLow collector-to-emitter saturation voltageHigh fTFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,H
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