2SD182 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:EN2211BPNP/NPN Epitaxial Planar Silicon Darlington Transistor2SB1225/2SD1827Driver ApplicationsApplications Package Dimensions Suitable for use in cotrol of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-voltage2041Aregulators.[2SB1225/2SD1827]Features High DC current gain. Large current capacity and wide ASO. Low

Ordering number:EN2213BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1227/2SD1829Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-votlage2041Aregulators.[2SB1227/2SD1829]Features High DC current gain. Large current capacity and wide ASO. L

Ordering number:EN2209CPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1223/2SD1825Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, and constant-voltage regulators.2041A[2SB1223/2SD1825]Features High DC current gain. Large current capacity and wide ASO. Micaless package

Ordering number:EN2210BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1224/2SD1826Driver ApplicationsApplications Package Dimensions Suitable for use in control of motor drivers, printerunit:mmhammer drivers, relay drivers, and constant-voltage2041Aregulators.[2SB1224/2SD1826]Features High DC current gain. Large current capacity and wide ASO. M

Ordering number:EN2212BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1226/2SD1828Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2041A[2SB1226/2SD1828]Features High DC current gain. Large current capcity and wide ASO. Micaless pakcage facilitating mounting.

Transistor2SD1823Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmFeatures 2.1 0.10.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).1 High emitter to base voltage VEBO. Low noise voltage NV.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion th

Transistor2SD1820, 2SD1820ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1219 and 2SB1219A2.1 0.1Features0.425 1.25 0.1 0.425Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute M

Transistor2SD1821, 2SD1821ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplificationFeatures 2.1 0.10.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and 1automatic insertion through the tape packing and the magazine3packing.

Transistor2SD1821, 2SD1821ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplificationFeatures 2.1 0.10.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and 1automatic insertion through the tape packing and the magazine3packing.

Transistor2SD1824Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425Features High foward current transfer ratio hFE.1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing

Transistor2SD1820, 2SD1820ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1219 and 2SB1219A2.1 0.1Features0.425 1.25 0.1 0.425Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute M

Transistor2SD1823Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmFeatures 2.1 0.10.425 1.25 0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).1 High emitter to base voltage VEBO. Low noise voltage NV.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion th

Transistor2SD1824Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425Features High foward current transfer ratio hFE.1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO.3 S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing

SMD Type TransistorsNPN Transistors2SD1820 Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB12191 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5A

SMD Type TransistorsNPN Transistors2SD1821 Features Low Collector-to-Emitter Saturation Voltage Low noise voltage NV. Complementary to 2SB12201 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage VEBO 5 Collector Cur

SMD Type TransistorsNPN Transistors2SD1820A Features Low Collector-to-Emitter Saturation Voltage Complementary to 2SB1219A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 0.5A

isc Silicon NPN Darlington Power Transistor 2SD1827DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1225Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,an

isc Silicon NPN Darlington Power Transistor 2SD1829DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = 3V, I = 2.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1227Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,

isc Silicon NPN Darlington Power Transistor 2SD1825DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1223Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant-vol

isc Silicon NPN Darlington Power Transistor 2SD1826DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 3.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1224APPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, relay drivers,and constant-voltageregulators.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1828DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = 3V, I = 1.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SB1226Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in motor drivers, printer hammer drivers,r