2SD1834 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1834 Datasheet Medium Power Transistor (60V / 1A) lOutline l SOT-89 Parameter Value SC-62 VCES 60V IC 1A MPT3 lFeatures lInner circuit l l 1)Darlington connection for high DC current gain. (typically,DC current gain=15000 at VCE=3V,IC=0.5A) 2)High input impedance. lApplication l

SMD Type Transistors NPN Transistors 2SD1834 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A C Collector Emitter Voltage VCEO=60V 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol

Ordering number EN2230B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1838 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SD1838] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity Wide ASO. On-chip Zener dio

Ordering number EN2214B PNP/NPN Epitaxial Planar Silicon Darlington Transistor 2SB1228/2SD1830 Driver Applications Applications Package Dimensions Suitable for use in control of motor drivers, printer unit mm hammer drivers, relay drivers, and constant-voltage 2041A regulators. [2SB1228/2SD1830] Features High DC current gain. Large current capacity and wide ASO. Lo

Ordering number ENN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2003B [2SB1229/2SD1835] 5.0 Features 4.0 4.0 Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

isc Silicon NPN Power Transistor 2SD1833 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 4A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIM

isc Silicon NPN Power Transistor 2SD1832 DESCRIPTION High Collector Current I = 5A C Low Collector Saturation Voltage V = 1.0V(Max.)@I = 3A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

isc Silicon NPN Darlington Power Transistor 2SD1830 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = 3V, I = 4A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SB1228 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, relay drivers,an