2SD1861 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1861
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 40 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz
Ganancia de corriente contínua (hfe): 20000
Empaquetado / Estuche: SOT33
Búsqueda de reemplazo de transistor bipolar 2SD1861
2SD1861 Datasheet (PDF)
4.1. 2sd1898 2sd1733 2sd1768s 2sd1863.pdf 
Size:114K _rohm
Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 ?Features ?Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.50.1 3) Good hFE linearity 1.60.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.40.1 0.50.1 0.40.1 1.50.1 1.50.1 3.00.2 (1) Base ROHM : MPT3 ?Str
4.2. 2sd1867.pdf Size:67K _rohm
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate) (
4.3. 2sd2195 2sd1980 2sd1867 2sd2398.pdf Size:66K _rohm
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)
4.4. 2sd1866.pdf Size:71K _rohm
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2) 4)
4.5. 2sd1868 2sd1869.pdf Size:30K _hitachi
2SD1868, 2SD1869 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD1868, 2SD1869 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1868 2SA1869 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA
4.6. 2sd186.pdf Size:25K _no
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
