2SD1897 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1897 Transistors Transistors 2SD1757K (96-768-D91) (94S-314-D95) 317

isc Silicon NPN Power Transistor 2SD1897 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO

2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO 80V Base Collector IC 1.0A Emitter Base Emitter 2SD1898 2SD1733 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4

2SD1898 Datasheet Middle Power Transistor (80V / 1A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=150mV at IC/IB=500mA/50mA. 2)Complementary PNP Types 2SB1260 lApplication l LOW FREQUENCY OUTPUT AMPLIFIER lPackaging specifications l Ba

2SD1898 Electrical Characteristics @ TA=25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=50 A, IE=0 Collector-Base Breakdown Voltage 100 V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 80 V V(BR)EBO IE=50 A, IC=0 Emitter-Base Breakdown Voltage 5 V ICBO VCB=80V, IE=0 Collector Cutoff Current 1 A IEBO VEB=4V, IC=0 Emitter Cu

Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SB1252 5.5 0.2 2.7 0.2 Features 3.1 0.1 Optimum for 35W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1254 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 60W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1253 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 40W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1255 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 90W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SD1898G-x-AA3-R SOT-223 B C E Tape Reel 2SD1898G-x-AB3-R SOT-89 B C E Tape Reel 2SD1898G-x-AE3-R SOT-23

2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 TYP. M 0.70 RE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Low VCE(sat) High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1260 Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol P

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251-3L FEATURES High hFE Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Unit 3.EMITTER VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1894 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SB1254 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMB

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION With TO-3PFa package Optimum for 90W HiFi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SB1255 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ra

Transys Electronics L I M I T E D TO-252 Plastic-Encapsulated Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation 1. BASE PCM 2 W (Tamb=25 ) 2. COLLECTOR Collector current 3. EMITTER ICM 3 A 1 2 3 Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARA

2SD1898 TRANSISTOR (NPN) SOT-89-3L FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR Complement the 2SB1260 Low Collector-Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VE

2SD1899 Transistor(NPN) 1.BASE TO-252-2L 2.COLLECTOR 3.EMITTER Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Conti

2SD1899-Z(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuou

2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) D-PAK(TO-252) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V V Emitter-Base Voltage VEBO 7 Collector Current -Continuous IC 3 A Collector Power Dissipation PC 1 W Junction Tempera

2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER C (Ta=25 ) ABSOLUTE MAXIMUM RATINGS Rating Symbol Limits Unit Vdc Collector-Base Voltage V 100 CBO Vdc Collector-Emitter Voltage 80 VCEO Vdc Emitter-Base Voltage 5 VEBO IC A(DC) 1 Collector Current ICP 2 A (Pulse)* PC 0.5 W Collector Power Dissipation T , Tstg C Junction Tempera

WILLAS 2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter Value Unit RoHS product for pack

2SD1899L(BR3DA1899LQF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features f T Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. / Applications

SMD Type Transistors NPN Transistors 2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage

2SD1898 1.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat) 0.42 0.1 0.46 0.1 Complementary to 2SB1260 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1

2SD1898 NPN-General use transistor 1W 1.0A 32V 4 Applications Can be used for switching and amplifying in Can be used for switching and amplifying in 1 2 3 various electrical and electronic equipments electrical and electronic equipments SOT-89 SOT 1 Base 2 Collector 3 Collector 3 Emitter Absolute Maximum Ratings (Ta = 25 ) parameters symbol rating unit

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1891 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 3A FE C Low Collector Saturation Voltgae- V = 3.0V(Max.)@ I = 3A CE(sat) C Complement to Type 2SB1251 Minimum Lot-to-Lot variations for robust device performance and reliable operati

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1890 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 2A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 2A CE(sat) C Complement to Type 2SB1250 Minimum Lot-to-Lot variations for robust device performance and reliable operati

isc Silicon NPN Power Transistors 2SD1899-K DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Complement to Type 2SB1261-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1892 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 4A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 4A CE(sat) C Complement to Type 2SB1252 Minimum Lot-to-Lot variations for robust device performance and reliable operat

isc Silicon NPN Darlington Power Transistor 2SD1894 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 6A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 6A CE(sat) C Complement to Type 2SB1254 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1899 DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V

isc Silicon NPN Darlington Power Transistor 2SD1893 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 5A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 5A CE(sat) C Complement to Type 2SB1253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1896 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Collector Power Dissipation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc Silicon NPN Darlington Power Transistor 2SD1895 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 7A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 7A CE(sat) C Complement to Type 2SB1255 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1899-Z DESCRIPTION Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High transition frequency applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V