2SD1912 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1912DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

Ordering number : ENN2246B2SB1274/2SD1913PNP/NPN Epitaxial Planar Silicon Transistors2SB1274/2SD191360V/3A Low-FrequencyPower Amplifier ApplicationsApplicationsPackage Dimensions General power amplifier.unit : mm2041A[2SB1274/2SD1913]4.510.02.8Features3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A Features Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO=160V) 2SD19182) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.94) Complements the 2SB1275. C0.50.8Min.1.5Absolute maximum ratings (Ta = 25C) 2.59.5Parameter Symbol Limits Unit

2SD1910 Silicon Diffused Power TransistorGENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PFMSYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCo

Silicon Diffused Power Transistor2SD1911GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PFMSYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VC

SMD Type TransistorsNPN Transistors2SD1918TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High breakdown voltage. Low collector output capacitance.0.127 High transition frequency+0.10.80-0.1max Complementary to 2SB1275+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Max

isc Silicon NPN Power Transistor 2SD1913DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1274Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SD1910DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1918DESCRIPTIONHigh fTfT=80MHz(TYP)High Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOExcellent linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SD1911DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA