2SD1912S Todos los transistores

 7.1. Size:701K  sanyo
 2sd1912.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 7.2. Size:217K  inchange semiconductor
 2sd1912.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(

 8.1. Size:44K  1
 2sd189x 2sd190x 2sd191x 2sd192x 2sd193x 2sd194x.pdf

 8.2. Size:505K  1
 2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf

 8.3. Size:595K  sanyo
 2sd1914.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 8.4. Size:34K  sanyo
 2sb1274 2sd1913.pdf

Ordering number ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions General power amplifier. unit mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

 8.5. Size:63K  rohm
 2sd2211 2sd1918 2sd1857a.pdf

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)

 8.6. Size:48K  rohm
 2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

 8.7. Size:143K  rohm
 2sd1918.pdf

Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A Features Dimensions (Unit mm) 1) High breakdown voltage.(BVCEO=160V) 2SD1918 2) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.9 4) Complements the 2SB1275. C0.5 0.8Min. 1.5 Absolute maximum ratings (Ta = 25 C) 2.5 9.5 Parameter Symbol Limits Unit

 8.8. Size:100K  wingshing
 2sd1910.pdf

2SD1910 Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Co

 8.9. Size:100K  wingshing
 2sd1911.pdf

Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V C

 8.10. Size:1071K  kexin
 2sd1918.pdf

SMD Type Transistors NPN Transistors 2SD1918 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High breakdown voltage. Low collector output capacitance. 0.127 High transition frequency +0.1 0.80-0.1 max Complementary to 2SB1275 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Max

 8.11. Size:213K  inchange semiconductor
 2sd1913.pdf

isc Silicon NPN Power Transistor 2SD1913 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1274 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.12. Size:214K  inchange semiconductor
 2sd1910.pdf

isc Silicon NPN Power Transistor 2SD1910 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 8.13. Size:189K  inchange semiconductor
 2sd1918.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1918 DESCRIPTION High fT fT=80MHz(TYP) High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Excellent linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATI

 8.14. Size:214K  inchange semiconductor
 2sd1911.pdf

isc Silicon NPN Power Transistor 2SD1911 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA