2SD1930 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1930
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.2 W
Tensión colector-base (Vcb): 100 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 5000
Empaquetado / Estuche: TO92
Búsqueda de reemplazo de transistor bipolar 2SD1930
2SD1930 Datasheet (PDF)
8.1. 2sd1936.pdf 
Size:190K _sanyo
Ordering number:EN2468PNP/NPN Epitaxial Planar Silicon Transistors2SB1296/2SD1936AF Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor drivers.2033[2SB1296/2SD1936]Features Large current capacity. Low collector to emitter saturation voltage. Wide ASO.B : BaseC : Collector( ) : 2SB
8.2. 2sd1935.pdf Size:133K _sanyo
Ordering number:EN2516PNP/NPN Epitaxial Planar Silicon Transistors2SB1295/2SD1935Low-Frequency General-Purpose Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor drivers.2018A[2SB1295/2SD1935]Features Large current capacity. Low collector to emitter saturation voltage. Very small-size
8.3. 2sd1939.pdf Size:124K _nec
8.4. 2sd1938.pdf Size:88K _panasonic
Transistors2SD1938(F)Silicon NPN epitaxial planar typeFor low-voltage output amplificationUnit: mm0.40+0.100.05For muting0.16+0.100.063For DC-DC converter Features Low ON resistance Ron1 2 High forward current transfer ratio hFE(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.12.90+0.20automatic insertion t
8.5. 2sd1934 e.pdf Size:40K _panasonic
Transistor2SD1934Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Paramete
8.6. 2sd1937 e.pdf Size:41K _panasonic
Transistor2SD1937Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB12975.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver-stage of a low-frequency and 40 to 60Woutput amplifier.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45
8.7. 2sd1934.pdf Size:36K _panasonic
Transistor2SD1934Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Paramete
8.8. 2sd1936m.pdf Size:822K _blue-rocket-elect
2SD1936M(BR3DG1936M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity ,low VCE sat ,wide ASO. / Applications
8.9. 2sd1938.pdf Size:935K _kexin
SMD Type TransistorsNPN Transistors2SD1938SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll
8.10. 2sd1935.pdf Size:1025K _kexin
SMD Type TransistorsNPN Transistors2SD1935SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 Large current capacity. Low collector to emitter saturation voltage. Complimentary to 2SB12951 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Bas
8.11. 2sd1932.pdf Size:210K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1932DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
8.12. 2sd1933.pdf Size:212K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1933DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1342Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RAT
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
