2SD1935-8 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1935-8
Código: CT8
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 450
Encapsulados: SOT23
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2SD1935-8 datasheet
7.1. Size:133K sanyo
2sd1935.pdf 
Ordering number EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor drivers. 2018A [2SB1295/2SD1935] Features Large current capacity. Low collector to emitter saturation voltage. Very small-size
7.2. Size:1025K kexin
2sd1935.pdf
SMD Type Transistors NPN Transistors 2SD1935 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Large current capacity. Low collector to emitter saturation voltage. Complimentary to 2SB1295 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Bas
8.2. Size:190K sanyo
2sd1936.pdf
Ordering number EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor drivers. 2033 [2SB1296/2SD1936] Features Large current capacity. Low collector to emitter saturation voltage. Wide ASO. B Base C Collector ( ) 2SB
8.4. Size:41K panasonic
2sd1937 e.pdf
Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1297 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 0.45 0.1 0.45
8.5. Size:88K panasonic
2sd1938.pdf
Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification Unit mm 0.40+0.10 0.05 For muting 0.16+0.10 0.06 3 For DC-DC converter Features Low ON resistance Ron 1 2 High forward current transfer ratio hFE (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 2.90+0.20 automatic insertion t
8.6. Size:36K panasonic
2sd1934.pdf
Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm For stroboscope 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Paramete
8.7. Size:40K panasonic
2sd1934 e.pdf
Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm For stroboscope 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Paramete
8.8. Size:822K blue-rocket-elect
2sd1936m.pdf
2SD1936M(BR3DG1936M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity ,low VCE sat ,wide ASO. / Applications
8.9. Size:935K kexin
2sd1938.pdf
SMD Type Transistors NPN Transistors 2SD1938 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll
8.10. Size:210K inchange semiconductor
2sd1932.pdf
isc Silicon NPN Darlington Power Transistor 2SD1932 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
8.11. Size:212K inchange semiconductor
2sd1933.pdf
isc Silicon NPN Darlington Power Transistor 2SD1933 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Complement to Type 2SB1342 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RAT
Otros transistores... 2SD1931, 2SD1932, 2SD1933, 2SD1934, 2SD1935, 2SD1935-5, 2SD1935-6, 2SD1935-7, 2SC5198, 2SD1936, 2SD1936S, 2SD1936T, 2SD1936U, 2SD1936V, 2SD1937, 2SD1938, 2SD1939
