2SD1943 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1943
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SD1943
2SD1943 Datasheet (PDF)
2sd1940.pdf
Ordering number:EN2533NPN Epitaxial Planar Silicon Transistor2SD194085V/6A, AF 25 to 30WOutput ApplicationsFeatures Package Dimensions Micaless package facilitating mounting.unit:mm Wide ASO.2041A[2SD1940]4.510.02.83.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector3 : Emitter2.55 2.55SANYO : TO-220MLSpecificationsAbsolute Maximum
2sd1949fra 2sd1484kfra.pdf
Data SheetAEC-Q101 QualifiedMedium Power Transistor (50V,0.5A)2SD1949FRA / 2SD1484KFRA2SD1949 / 2SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) CollectorAbsolute maximum rationgs (Ta=25 C)SMT3(SC-59)Parameter Symbol Limits Unit
2sd1949 2sd1949 2sd1484k.pdf
Data SheetMedium Power Transistor (50V,0.5A)MediumPowerTransistor(50V,0.5A)2SD1949 / 2SD1484K2SD19492SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) C
2sd1949 2sd1484k.pdf
2SD1949 / 2SD1484KDatasheetMiddle Power Transistor (50V, 500mA)lOutlinelParameter Value SOT-323 SOT-346VCEO50VIC500mA 2SD1949 2SD1484K(UMT3) (SMT3) lFeatures lInner circuitl l1)High current. (IC=0.5A)2)Low VCE(sat) VCE(sat)400mV at IC=150mA/IB=15
2sd1940.pdf
isc Silicon NPN Power Transistor 2SD1940DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF 25~30W output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sd1941.pdf
isc Silicon NPN Power Transistor 2SD1941DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV/character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Ba
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SD1913R | 2SC1210 | 92PU36B | 2N2975 | 2SB1142S | 2N2973 | 2SC1208
History: 2SD1913R | 2SC1210 | 92PU36B | 2N2975 | 2SB1142S | 2N2973 | 2SC1208
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050