2SD1950 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1950
Código: VK_VL_VM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75 W
Tensión colector-base (Vcb): 30 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 1500
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar 2SD1950
2SD1950 Datasheet (PDF)
2sd1950.pdf
SMD Type Transistors NPN Transistors 2SD1950 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO
2sd1953.pdf
Ordering number EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit mm 2009A Features [2SD1953] 8.0 2.7 Darlington connection. 4.0 High DC current gain. Low dependence of DC current gain on temperature. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitte
2sd1958.pdf
Ordering number EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions Excellent tf permitting efficient drive with less unit mm internal dissipation. 2041A [2SD1958] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector 3 Emitter 2.55 2.55
Otros transistores... 2SD1944 , 2SD1945 , 2SD1946 , 2SD1947 , 2SD1947A , 2SD1948 , 2SD1949 , 2SD195 , D667 , 2SD1951 , 2SD1952 , 2SD1953 , 2SD1955 , 2SD1956 , 2SD1957 , 2SD1958 , 2SD1959 .
History: MUN2112T1G | 2SC2905 | KD606 | K2122B | BDT62CF | 2SD23 | GCN53
History: MUN2112T1G | 2SC2905 | KD606 | K2122B | BDT62CF | 2SD23 | GCN53
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