2SD1956 Todos los transistores

 

2SD1956 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1956
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 120 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SD1956

 

2SD1956 Datasheet (PDF)

 8.1. Size:74K  sanyo
2sd1953.pdf

2SD1956
2SD1956

Ordering number:EN2507NPN Epitaxial Planar Silicon Transistor2SD1953120V/1.5A Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit:mm2009AFeatures [2SD1953]8.02.7 Darlington connection.4.0 High DC current gain. Low dependence of DC current gain on temperature.3.01.60.80.80.60.51 : Emitte

 8.2. Size:85K  sanyo
2sd1958.pdf

2SD1956
2SD1956

Ordering number:EN2549ANPN Triple Diffused Planar Silicon Transistor2SD1958TV Horizontal Deflection OutputHigh-Current Switching ApplicationsFeatures Package Dimensions Excellent tf permitting efficient drive with lessunit:mminternal dissipation.2041A[2SD1958]4.510.02.83.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector3 : Emitter2.55 2.55

 8.3. Size:255K  nec
2sd1950.pdf

2SD1956
2SD1956

 8.4. Size:40K  rohm
2sd1957.pdf

2SD1956

2SD1957TransistorsTransistors2SD2061(94L-919D301)(94L-1016-D304)315

 8.5. Size:1305K  kexin
2sd1950.pdf

2SD1956
2SD1956

SMD Type TransistorsNPN Transistors2SD1950SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

 8.6. Size:190K  inchange semiconductor
2sd1959.pdf

2SD1956
2SD1956

isc Product Specificationisc Silicon NPN Power Transistor 2SD1959DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 650V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.7. Size:208K  inchange semiconductor
2sd1958.pdf

2SD1956
2SD1956

isc Silicon NPN Power Transistor 2SD1958DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output high-currentswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TP3638A

 

 
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History: TP3638A

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