2SD198 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Product Specificationisc Silicon NPN Power Transistor 2SD198DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOExcellent Safe Operating AreaFast Switching SpeedWith TO-3 Package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulator.Switching mode po

Ordering number:EN2534NPN Epitaxial Planar Silicon Darlington Transistor2SD1981Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2006B[2SD1981]6.0Features4.75.0 Darlington connection (on-chip bias resistance,damper diode). High DC current gain. Low dependence of D

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

Power Transistor (100V, 2A) 2SD1980 Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD19802) Built-in resistor between base and emitter. 6.55.12.33) Built-in damper diode. 0.54) Complements the 2SB1316. inner circuit C0.750.65B 0.92.32.3(1) (2) (3)0.51.0R1 R2(1) BaseE(2) CollectorR1 3.5k B : Base

Power Transistors2SD1985, 2SD1985ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1393 and 2SB1393AUnit: mmFeatures High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink wi

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1988DESCRIPTIONHigh DC Current Gain-: h = 3000(Min)@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency amplification

isc Silicon NPN Power Transistor 2SD1985ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 1.2V(Max,)@ I = 3ACE(sat) CComplement to Type 2SB1393AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB1393 /1393A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplifie

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1982DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorGeneral purpose power amplifie

isc Silicon NPN Power Transistor 2SD1980DESCRIPTIONDarlington connection for high DC current gainBuilt in resistor between base and emitterBuilt in damper diodeComplementary PNP types:2SB1316100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1986DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSw

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1987DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSw

isc Silicon NPN Power Transistor 2SD1985DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 1.2V(Max,)@ I = 3ACE(sat) CComplement to Type 2SB1393Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1983DESCRIPTIONHigh DC Current Gain: h = 4000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low-frequency amplificationAB