2SD1982 Todos los transistores

 

2SD1982 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1982

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 2000

Empaquetado / Estuche: TO128

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2SD1982 Datasheet (PDF)

4.1. 2sd1981.pdf Size:71K _sanyo

2SD1982
2SD1982

Ordering number:EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2006B [2SD1981] 6.0 Features 4.7 5.0 Darlington connection (on-chip bias resistance, damper diode). High DC current gain. Low dependence of DC curre

4.2. 2sd1980.pdf Size:128K _rohm

2SD1982
2SD1982

Power Transistor (100V, 2A) 2SD1980 ?Features ?Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD1980 2) Built-in resistor between base and emitter. 6.5 5.1 2.3 3) Built-in damper diode. 0.5 4) Complements the 2SB1316. ?inner circuit C 0.75 0.65 B 0.9 2.3 2.3 (1) (2) (3) 0.5 1.0 R1 R2 (1) Base E (2) Collector R1 3.5k? B : Base ROHM : CP

 4.3. 2sd2195 2sd1980 2sd1867 2sd2398.pdf Size:66K _rohm

2SD1982

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

4.4. 2sd1985.pdf Size:47K _panasonic

2SD1982
2SD1982

Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A Unit: mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one

 4.5. 2sd1985 2sd1985a.pdf Size:103K _inchange_semiconductor

2SD1982
2SD1982

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified o

4.6. 2sd198.pdf Size:148K _inchange_semiconductor

2SD1982
2SD1982

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD198 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·voltage regulator ·Inverters ·Switching mode power supply PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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