2SD1983 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 DESCRIPTION High DC Current Gain h = 4000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low-frequency amplification AB

Ordering number EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2006B [2SD1981] 6.0 Features 4.7 5.0 Darlington connection (on-chip bias resistance, damper diode). High DC current gain. Low dependence of D

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

Power Transistor (100V, 2A) 2SD1980 Features Dimensions (Unit mm) 1) Darlington connection for high DC current gain. 2SD1980 2) Built-in resistor between base and emitter. 6.5 5.1 2.3 3) Built-in damper diode. 0.5 4) Complements the 2SB1316. inner circuit C 0.75 0.65 B 0.9 2.3 2.3 (1) (2) (3) 0.5 1.0 R1 R2 (1) Base E (2) Collector R1 3.5k B Base

Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink wi

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1988 DESCRIPTION High DC Current Gain- h = 3000(Min)@ I = 1A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency amplification

isc Silicon NPN Power Transistor 2SD1985A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 1.2V(Max,)@ I = 3A CE(sat) C Complement to Type 2SB1393A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB1393 /1393A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplifie

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1982 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator General purpose power amplifie

isc Silicon NPN Power Transistor 2SD1980 DESCRIPTION Darlington connection for high DC current gain Built in resistor between base and emitter Built in damper diode Complementary PNP types 2SB1316 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1986 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 2A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Sw

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1987 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 2A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Sw

isc Product Specification isc Silicon NPN Power Transistor 2SD198 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Excellent Safe Operating Area Fast Switching Speed With TO-3 Package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Voltage regulator. Switching mode po

isc Silicon NPN Power Transistor 2SD1985 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 1.2V(Max,)@ I = 3A CE(sat) C Complement to Type 2SB1393 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. A