2SD2002 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Ma

NPN TRIPLE DIFFUSED 2SD200 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD200 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2001 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc Silicon NPN Power Transistor 2SD2000 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO High Speed Switching Good Linearity of h FE High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM