2SD2002 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD2000Silicon NPN triple diffusion planar typeFor power switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingSatisfactory linearity of foward current transfer ratio hFE 3.1 0.1Large collector power dissipation PCFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute Ma

NPN TRIPLE DIFFUSED2SD200 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD200DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2001DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistor 2SD2000DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOHigh Speed SwitchingGood Linearity of hFEHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM