2SD2034 Todos los transistores

 

2SD2034 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2034

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 80 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD2034

 

2SD2034 Datasheet (PDF)

8.1. 2sd2033a.pdf Size:361K _rohm

2SD2034
2SD2034

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

8.2. 2sd2030 2sd2031.pdf Size:30K _hitachi

2SD2034
2SD2034

2SD2030, 2SD2031Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD2030, 2SD2031Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SD2030 2SD2031 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEBO 55VCollector current IC 100 100

 8.3. 2sd203.pdf Size:193K _inchange_semiconductor

2SD2034
2SD2034

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD203DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicatio

8.4. 2sd2033.pdf Size:206K _inchange_semiconductor

2SD2034
2SD2034

isc Silicon NPN Power Transistor 2SD2033DESCRIPTIONGood Linearity of hFE Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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