2SD2043
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2043
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 120
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10000
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SD2043
2SD2043
Datasheet (PDF)
8.1. Size:131K sanyo
2sd2049.pdf 
Ordering number:EN2752BNPN Triple Diffused Planar Silicon Darlington Transistor2SD2049Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049C[2SD2049]10.24.5Features1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi
8.2. Size:78K sanyo
2sd2048.pdf
Ordering number:EN2751BNPN Triple Diffused Planar Silicon Darlington Transistor2SD2048Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049C[2SD2048]10.24.5Features1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi
8.4. Size:32K hitachi
2sd2046.pdf
2SD2046Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter2 k 0.5 2. Collector (Typ) (Typ)13. Base3212SD2046Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VEmitter to base voltage VEBO 7VCollector current IC 1.5 ACollector peak current ic (peak)
8.5. Size:26K sanken-ele
2sd2045.pdf
Equivalent CcircuitBDarlington 2SD2045(2.5k)(200)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SD2045 Symbol Conditions 2SD2045 UnitUnit0.20.2 5.515.60.23.45VCBO 120 ICBO VCB=120
8.6. Size:203K inchange semiconductor
2sd2045.pdf
isc Silicon NPN Darlington Power Transistor 2SD2045DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned of driver
8.7. Size:203K inchange semiconductor
2sd2047.pdf
isc Silicon NPN Power Transistor 2SD2047DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
