2SD2052 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD2052Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB136115.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTOptimum for the output stage of a HiFi aud

isc Silicon NPN Power Transistor 2SD2052DESCRIPTIONHigh Current-Gain Bandwidth ProductGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1361Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification, optimum for theoutput stage of a HiFi audio amplifier.ABSOLUTE MAXIMU

Ordering number:EN2753CNPN Triple Diffused Planar Silicon Transistor2SD2050Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049C[2SD2050]10.2Features 4.51.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.1.2

Power Transistors2SD2051Silicon NPN epitaxial planar type DarlingtonFor low-frequency amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEIncorporating a built-in zener diodeFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25

Power Transistors2SD2057Silicon NPN triple diffusion planar typeFor horizontal deflection outputUnit: mm15.0 0.3 5.0 0.23.211.0 0.2FeaturesIncorporating a built-in damper diode 3.2 0.1Reduction of a parts count and simplification of a circuit are al-lowedHigh breakdown voltage with high reliability2.0 0.2 2.0 0.1High-speed switching1.1 0.1 0.6 0

www.DataSheet4U.comSavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2058 DESCRIPTION With TO-220F package Complement to type 2SB1366 Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A Collector power dissipation: PC=25W(TC=25)APPLICATIONS With general purpose applications PINNING PIN DESCRIPTION1 Base 2 Co

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2051DESCRIPTIONHigh DC Current Gain: h = 4000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low-frequency amplificationAB

isc Silicon NPN Power Transistor 2SD2057DESCRIPTIONHigh Voltage, High SpeedWide Area of Safe OperationBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V

isc Silicon NPN Power Transistor 2SD2058DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOCollector Power Dissipation: P = 25 W(Max)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc Silicon NPN Power Transistor 2SD2053DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1362Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2055DESCRIPTIONHigh DC Current Gain -: h =20(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementar

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2059DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 2.0V(Max)@ (I = 4A, I = 0.4A)CE(sat) C BComplement to Type 2SB1367Minimum Lot-to-Lot variations for robust deviceperformance and reliable