2SD2055 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2055 DESCRIPTION High DC Current Gain - h =20(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementar

Ordering number EN2753C NPN Triple Diffused Planar Silicon Transistor 2SD2050 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049C [2SD2050] 10.2 Features 4.5 1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO. 1.2

Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1361 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi aud

Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit mm 15.0 0.3 5.0 0.2 3.2 11.0 0.2 Features Incorporating a built-in damper diode 3.2 0.1 Reduction of a parts count and simplification of a circuit are al- lowed High breakdown voltage with high reliability 2.0 0.2 2.0 0.1 High-speed switching 1.1 0.1 0.6 0

www.DataSheet4U.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2058 DESCRIPTION With TO-220F package Complement to type 2SB1366 Low collector saturation voltage VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A Collector power dissipation PC=25W(TC=25 ) APPLICATIONS With general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Co

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2051 DESCRIPTION High DC Current Gain h = 4000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low-frequency amplification AB

isc Silicon NPN Power Transistor 2SD2052 DESCRIPTION High Current-Gain Bandwidth Product Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1361 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplification, optimum for the output stage of a HiFi audio amplifier. ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SD2057 DESCRIPTION High Voltage, High Speed Wide Area of Safe Operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V

isc Silicon NPN Power Transistor 2SD2058 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Collector Power Dissipation P = 25 W(Max) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

isc Silicon NPN Power Transistor 2SD2053 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1362 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2059 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = 2.0V(Max)@ (I = 4A, I = 0.4A) CE(sat) C B Complement to Type 2SB1367 Minimum Lot-to-Lot variations for robust device performance and reliable