2SD2076 Todos los transistores

 

2SD2076 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2076

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 90 MHz

Capacitancia de salida (Cc): 110 pF

Ganancia de corriente contínua (hfe): 500

Empaquetado / Estuche: ISO220

Búsqueda de reemplazo de transistor bipolar 2SD2076

 

2SD2076 Datasheet (PDF)

4.1. 2sd2075a.pdf Size:244K _toshiba

2SD2076
2SD2076



4.2. 2sd2075.pdf Size:211K _toshiba

2SD2076
2SD2076



 4.3. 2sd2079.pdf Size:219K _toshiba

2SD2076
2SD2076



4.4. 2sd2074 e.pdf Size:49K _panasonic

2SD2076
2SD2076

Transistor 2SD2074 Silicon NPN epitaxial planer type Unit: mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.450.05 Allowing supply with the radial taping. 2.5 0.5

 4.5. 2sd2071 e.pdf Size:53K _panasonic

2SD2076
2SD2076

Transistor 2SD2071 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SB1377 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 0.65 max. 2SB1377. Allowing supply with the radial taping. +0.1

4.6. 2sd2074.pdf Size:44K _panasonic

2SD2076
2SD2076

Transistor 2SD2074 Silicon NPN epitaxial planer type Unit: mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.450.05 Allowing supply with the radial taping. 2.5 0.5

4.7. 2sd2079.pdf Size:116K _inchange_semiconductor

2SD2076
2SD2076

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2079 DESCRIPTION Ў¤ With TO-220F package Ў¤ DARLINGTON Ў¤ High DC current gain Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB1381 APPLICATIONS Ў¤ High power switching applications Ў¤ Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absol

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


2SD2076
  2SD2076
  2SD2076
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: RD9FE-V | RD9FE-T | RD9FE-R | FJP3305H2 | CHT807PTS | CHT807PTR | CHT807PTQ | 3DA4544Y | 3DA4544O | 3DA4544R | 3DD2553 | 2SD1710C | NP061A3 | KTC601UY | KSC5802D | FA1L3Z-L38 | FA1L3Z-L37 | FA1L3Z-L36 | EB102 | DC8550E |

 

 

 
Back to Top