2SD2079
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2079
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 7000
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de transistor bipolar 2SD2079
2SD2079
Datasheet (PDF)
..2. Size:196K inchange semiconductor
2sd2079.pdf 
isc Silicon NPN Darlington Power Transistor 2SD2079DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 3A)FE CE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 3A, I = 6mA)CE(sat) C BComplement to Type 2SB1381Minimum Lot-to-Lot variations for robust deviceperformance and reliable oper
8.4. Size:53K panasonic
2sd2071 e.pdf
Transistor2SD2071Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SB13772.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with0.65 max.2SB1377.Allowing supply with the radial taping.+
8.5. Size:44K panasonic
2sd2074.pdf
Transistor2SD2074Silicon NPN epitaxial planer typeUnit: mmFor low-frequency output amplification2.5 0.11.056.9 0.1 0.05 (1.45)For muting0.7 4.0 0.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.
8.6. Size:49K panasonic
2sd2074 e.pdf
Transistor2SD2074Silicon NPN epitaxial planer typeUnit: mmFor low-frequency output amplification2.5 0.11.056.9 0.1 0.05 (1.45)For muting0.7 4.0 0.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.
8.7. Size:193K inchange semiconductor
2sd207.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD207DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching appli
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
