2SD2093 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2093
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 110 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 20 MHz
Ganancia de corriente contínua (hFE): 4000
Encapsulados: TO218
Búsqueda de reemplazo de 2SD2093
- Selecciónⓘ de transistores por parámetros
2SD2093 datasheet
..1. Size:145K sanyo
2sd2093.pdf 
Ordering number EN3720 2SB1388 PNP Epitaxial Planar Silicon Transistors 2SD2093 NPN Triple Diffused Planar Silicon Transistors 2SB1388/2SD2093 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2039A [2SB1388/2SD2093] Features High DC current gain. Large current capacity and la
..2. Size:39K jmnic
2sd2093.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2093 DESCRIPTION With TO-3PML package DARLINGTON Complement to type 2SB1388 High DC current gain Low saturation voltage Large current capacity and large ASO APPLICATIONS Motor drivers Printer hammer drivers Relay drivers, Voltage regulator control PINNING PIN DESCRIPTION 1 Bas
..3. Size:203K inchange semiconductor
2sd2093.pdf
isc Silicon NPN Darlington Power Transistor 2SD2093 DESCRIPTION Micaless package facilitating mounting. Large current capacity and large ASO. Low saturation volatage. V = 1.5V(Max) @I = 5A,I =10mA CE(sat) C B High DC Current Gain h = 1500(Min) @ I = 5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des
8.2. Size:126K sanyo
2sd2099.pdf
Ordering number EN3174B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1394/2SD2099 Compact Motor Driver Applications Features Package Dimensions Contains input resistance (R1), base-to-emitter unit mm resistance (RBE). 2038A Contains diode between collector and emitter. [2SB1394/2SD2099] Low saturation voltage. Large current capacity. Small-sized package makin
8.3. Size:87K rohm
2sd2098 2sd2118 2sd2097.pdf
2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE(sat) transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 External dimensions (Units mm) Features 1) Low VCE(sat). 2SD2098 +0.2 VCE(sat) = 0.25V (Typ.) 4.5 -0.1 +0.2 1.5 1.6 0.1 -0.1 (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326. (1) (2) (3) 0.4+0.1 -0.05
8.4. Size:159K rohm
2sd2098 2sd2166.pdf
Transistors Low VCE(sat) Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type NPN silicon transistor (96-229-D204) 252 Trans
8.5. Size:348K rohm
2sd2091.pdf
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep
8.6. Size:313K rohm
2sd2096.pdf
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep
8.8. Size:1191K jiangsu
2sd2098.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2098 FEATURES 1. BASE Excellent DC current gain characteristics Complements the 2SB1386 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Vol
8.9. Size:38K jmnic
2sd2095.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2095 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE
8.10. Size:800K htsemi
2sd2098.pdf
2SD2098 FEATURES SOT-89 Excellent DC current gain characteristics Complements the 2SB1386 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 VCBO Collector-Base Voltage 50 V 3. EMITTER 3 VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 5 A PC Collector Power
8.11. Size:254K lge
2sd2098.pdf
2SD2098 SOT-89 Features 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 2 4.4 1.6 1.8 3. EMITTER 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Excellent DC current gain characteristics 0.8 MIN Complements the 2SB1386 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Param
8.12. Size:182K lge
2sd2097.pdf
2SD2097(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 4.45 5.21 3. BASE 4.32 2.92 5.33 MIN Features Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 2.67 Symbol Parameter Value Units 1.14 1.40 VCBO Collector-B
8.13. Size:116K wietron
2sd2098.pdf
2SD2098 NPN Plastic-Encapsulate Transistor SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25%C) Rating Unit Symbol Value Vdc Collector-Emitter Voltage 20 VCEO Vdc Collector-Base Voltage 50 VCBO Emitter-Base Voltage VEBO 6.0 Vdc I Adc(DC) C 5.0 Collector Current I CP 10 Adc (Pulse)(1) PC Collector Power Dissipation 0.5 W Tj , Tstg %C Juncti
8.14. Size:1124K kexin
2sd2099.pdf
SMD Type Transistors NPN Transistors 2SD2099 1.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB1394 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col
8.15. Size:298K kexin
2sd2098.pdf
SMD Type Transistors NPN Transistors 2SD2098 1.70 0.1 Features Excellent DC current gain characteristics Complements the 2SB1386 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector Curren
8.16. Size:84K chenmko
2sd2098pgp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SD2098PGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. ( DPAK ) DPAK * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High saturation current capability. .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) CONSTRUCTION * NPN Cilicon Tran
8.17. Size:109K chenmko
2sd2098gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SD2098GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX.
8.19. Size:198K inchange semiconductor
2sd2095.pdf
isc Silicon NPN Power Transistor 2SD2095 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
8.20. Size:198K inchange semiconductor
2sd2094.pdf
isc Silicon NPN Darlington Power Transistor 2SD2094 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 4A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low f
8.21. Size:189K inchange semiconductor
2sd2091.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2091 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency power amplifi
Otros transistores... 2SD208, 2SD2081, 2SD2082, 2SD2083, 2SD2088, 2SD2089, 2SD208A, 2SD2092, A940, 2SD2094, 2SD2095, 2SD2097, 2SD2098Q, 2SD2098R, 2SD2098S, 2SD2099, 2SD21
