2SD2105 Datasheet. Equivalente

 ..1. Size:197K  inchange semiconductor
 2sd2105.pdf

isc Silicon NPN Darlington Power Transistor 2SD2105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 5A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low f

 8.1. Size:144K  sanyo
 2sd2100.pdf

Ordering number EN3176A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1397/2SD2100 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains diode between collector and emitter. 2038 Contains bias resistance between base and emitter. [2SB1397/2SD2100] Large current capacity. Small-sized package making it easy to prov

 8.2. Size:35K  hitachi
 2sd2104.pdf

2SD2104 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 k 200 2 3 (Typ) (Typ) 3 2SD2104 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 8A Col

 8.3. Size:35K  hitachi
 2sd2106.pdf

2SD2106 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 k 200 2 3 (Typ) (Typ) 3 2SD2106 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 6A Colle

 8.4. Size:351K  hitachi
 2sd2108.pdf

2SD2108 Transient Thermal Resistance 10 3 TC = 25 C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) j-c Thermal resistance ( C/W)

 8.5. Size:335K  hitachi
 2sd2102.pdf

2SD2102 Transient Thermal Resistance 10 3 TC = 25 C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) j-c Thermal resistance ( C/W)

 8.6. Size:32K  hitachi
 2sd2107.pdf

2SD2107 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5V Collector current IC 4A Collector peak current IC(peak) 8A Collector power d

 8.7. Size:35K  hitachi
 2sd2101.pdf

2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 3 k 150 3 (Typ) (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 7V Collector current IC 10 A Co

 8.8. Size:103K  jmnic
 2sd2101.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Op

 8.9. Size:1046K  kexin
 2sd2100.pdf

SMD Type Transistors NPN Transistors 2SD2100 1.70 0.1 Features Low saturation voltage Collector Large current cappacity 0.42 0.1 Complementary to 2SB1397 0.46 0.1 Base 1.Base RBE 2.Collector 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitt

 8.10. Size:198K  inchange semiconductor
 2sd2104.pdf

I isc Silicon NPN Darlington Power Transistor 2SD2104 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 4A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for lo

 8.11. Size:197K  inchange semiconductor
 2sd2106.pdf

isc Silicon NPN Darlington Power Transistor 2SD2106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 3A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low f

 8.12. Size:198K  inchange semiconductor
 2sd2108.pdf

isc Silicon NPN Darlington Power Transistor 2SD2108 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 4A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low fr

 8.13. Size:198K  inchange semiconductor
 2sd2107.pdf

isc Silicon NPN Power Transistor 2SD2107 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

 8.14. Size:198K  inchange semiconductor
 2sd2101.pdf

isc Silicon NPN Darlington Power Transistor 2SD2101 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 5A CE(sat) C High DC Current Gain h = 1500(Min) @ I = 5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low f