2SD2121SC Todos los transistores

 7.1. Size:31K  hitachi
 2sd2121.pdf

2SD2121(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V

 7.2. Size:980K  kexin
 2sd2121.pdf

SMD Type Transistors NPN Transistors 2SD2121 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low frequency power amplifier Complementary to 2SB1407 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

 8.1. Size:238K  toshiba
 2sd2127.pdf

 8.2. Size:216K  toshiba
 2sd2129.pdf

 8.3. Size:71K  sanyo
 2sd2120.pdf

Ordering number EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features Package Dimensions Darlington connection (Contains bias resistance, unit mm damper diode). 2064A High DC current gain. [2SD2120] 2.5 Less dependence of DC current gain on temperature. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector 3 Base

 8.4. Size:34K  hitachi
 2sd2122 2sd2123.pdf

2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) Unit Collector to base voltage VC

 8.5. Size:33K  hitachi
 2sd2124.pdf

2SD2124(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier Outline DPAK 4 2, 4 4 1 1 2 ID 1. Base 3 2. Collector 3. Emitter S Type 12 6 k 0.5 k 4. Collector 3 (Typ) (Typ) L Type 3 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter

 8.6. Size:64K  no
 2sd2125.pdf

 8.7. Size:202K  inchange semiconductor
 2sd2125.pdf

isc Silicon NPN Power Transistor 2SD2125 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 8.8. Size:197K  inchange semiconductor
 2sd2128.pdf

isc Silicon NPN Darlington Power Transistor 2SD2128 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 1.5A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 1.5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for lo

 8.9. Size:195K  inchange semiconductor
 2sd2129.pdf

isc Silicon NPN Darlington Power Transistor 2SD2129 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1.5A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1.5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power swi