2SD2137 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD2137, 2SD2137ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1417 and 2SB1417AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity5.0 0.1Low collector to emitter saturation voltage VCE(sat)10.0 0.2 1.0Allowing supply with the radial taping90Absolute Maximum Ratings (TC=25

2SD2137(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V

2SD2137(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3Features High forward current transfer ratio hFE which hassatisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2137DESCRIPTIONSilicon NPN triple diffusion planar typeComplementary to 2SB1417Low Collector to Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAllowing supply with the radial tapingAPPLICATIONSDesigned for power amplifiersABSOLUTE MAXIMUM RATING

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SD2137A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) 3. EMITTER Allowing Automatic Insertion with Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U

isc Silicon NPN Power Transistor 2SD2137ADESCRIPTIONCollectorEmitter Sustaining VoltageV 80 V(Min)CEO:Low Collector Saturation Voltage: V = 1.2V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A, I = 10 mA) CE (sat) C B Zener diode included between

Power Transistors2SD2136Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmComplementary to 2SB14167.50.2 4.50.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat)0.650.1 0.850.10.8 C 0.8 C1.00.1 Allowing supply with the radial taping0.70.10

Power Transistors2SD2133Silicon NPN epitaxial planar typeFor low-frequency power amplification driverUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat)0.650.1 0.850.10.8 C 0.8 C1.00.1 Absolute Maximum Ratings TC = 25C0.70.10.70.1Parameter Symbol Rating Unit 1.150.21.150.2Collector-base voltage (Emitter op

Power Transistors2SD2138, 2SD2138ASilicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB1418 and 2SB1418A5.0 0.110.0 0.2 1.0Features90 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0

Power Transistors2SD2139Silicon NPN triple diffusion planar typeFor high-current amplification ratio, power amplificationUnit: mm5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0

UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. ORDERING INFORMATION Ordering Number Pin A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors2SD2136 TRANSISTOR (NPN)TO 126 FEATURES High Forward Current Transfer Ratio hFE Which has 1. EMITTERSatisfactory Linearity. 2. COLLECTOR Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping 3. BASE Equivalent Circuit D2136=Device

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD213DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applic