2SD2139 Todos los transistores

 

2SD2139 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2139

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 80 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD2139

 

2SD2139 Datasheet (PDF)

0.1. 2sd2139.pdf Size:50K _panasonic

2SD2139
2SD2139

Power Transistors2SD2139Silicon NPN triple diffusion planar typeFor high-current amplification ratio, power amplificationUnit: mm5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0

8.1. 2sd2131.pdf Size:240K _toshiba

2SD2139
2SD2139

8.2. 2sd2130.pdf Size:209K _toshiba

2SD2139
2SD2139

2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A, I = 10 mA) CE (sat) C B Zener diode included between

 8.3. 2sd2133.pdf Size:96K _panasonic

2SD2139
2SD2139

Power Transistors2SD2133Silicon NPN epitaxial planar typeFor low-frequency power amplification driverUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat)0.650.1 0.850.10.8 C 0.8 C1.00.1 Absolute Maximum Ratings TC = 25C0.70.10.70.1Parameter Symbol Rating Unit 1.150.21.150.2Collector-base voltage (Emitter op

8.4. 2sd2136.pdf Size:86K _panasonic

2SD2139
2SD2139

Power Transistors2SD2136Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmComplementary to 2SB14167.50.2 4.50.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat)0.650.1 0.850.10.8 C 0.8 C1.00.1 Allowing supply with the radial taping0.70.10

 8.5. 2sd2138.pdf Size:61K _panasonic

2SD2139
2SD2139

Power Transistors2SD2138, 2SD2138ASilicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB1418 and 2SB1418A5.0 0.110.0 0.2 1.0Features90 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0

8.6. 2sd2137.pdf Size:54K _panasonic

2SD2139
2SD2139

Power Transistors2SD2137, 2SD2137ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1417 and 2SB1417AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity5.0 0.1Low collector to emitter saturation voltage VCE(sat)10.0 0.2 1.0Allowing supply with the radial taping90Absolute Maximum Ratings (TC=25

8.7. 2sd2136.pdf Size:164K _utc

2SD2139
2SD2139

UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. ORDERING INFORMATION Ordering Number Pin A

8.8. 2sd2137a.pdf Size:105K _jiangsu

2SD2139

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SD2137A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) 3. EMITTER Allowing Automatic Insertion with Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U

8.9. 2sd2137 to-220f.pdf Size:161K _lge

2SD2139
2SD2139

2SD2137(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3Features High forward current transfer ratio hFE which hassatisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60

8.10. 2sd2137.pdf Size:233K _lge

2SD2139
2SD2139

2SD2137(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V

8.11. 2sd2137a.pdf Size:216K _inchange_semiconductor

2SD2139
2SD2139

isc Silicon NPN Power Transistor 2SD2137ADESCRIPTIONSilicon NPN triple diffusion planar typeComplementary to 2SB1417ALow Collector to Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAllowing supply with the radial tapingAPPLICATIONSDesigned for power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

8.12. 2sd213.pdf Size:193K _inchange_semiconductor

2SD2139
2SD2139

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD213DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applic

8.13. 2sd2137.pdf Size:211K _inchange_semiconductor

2SD2139
2SD2139

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2137DESCRIPTIONSilicon NPN triple diffusion planar typeComplementary to 2SB1417Low Collector to Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAllowing supply with the radial tapingAPPLICATIONSDesigned for power amplifiersABSOLUTE MAXIMUM RATING

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
Back to Top

 


2SD2139
  2SD2139
  2SD2139
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: 3DD5E | CD551B | YTS2907A | YTS2906A | YTS2907 | YTS2906 | YTS4403 | YTS4402 | YTS4126 | YTS4125 | YTS3906 | YTS3905 | YTS2222A | YTS2221A | YTS2222 | YTS2221 | YTS4401 | YTS4400 | YTS4124 | YTS4123 | YTS3904

 

 

 
Back to Top