2SD2155 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SD2155DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SB1429Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency ampl

Low Frequency Transistor (20V, 3A) 2SD2150 Features Dimensions(Unit : mm) 1) Low VCE(sat). 2SD2150VCE(sat) = 0.2V(Typ.) 4.5+0.2-0.1IC / IB = 2A / 0.1A 1.5+0.21.60.1 -0.12) Excellent current gain characteristics. 3) Complements the 2SB1424. (1) (2) (3)0.4+0.1-0.050.40.1 0.50.1 Structure 0.40.11.50.1 1.50.1Epitaxial planar type 3.00.2

High gain amplifier transistor (25V, 2A) 2SD2153 Features Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 4.01.0 2.5 0.52) Excellent DC current gain characteristics. (1)(2)(3)(1) Base(2) Collector(3) EmitterROHM : MPT3EIAJ : SC-62Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollect

Power Transistors2SD2151Silicon NPN epitaxial planar typeFor power switchingUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink withone screwAbsolute Maxi

2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics 1 Low Collector Saturation Voltage, 23A VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A ECCollector B C E 2 B D1 F GBase H KJ L3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) 2. COLLECTOR VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Un

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2153 TRANSISTOR (NPN) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR Excellent DC current gain characteristics 3. EMITTER MARKING: DN MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 30 V VCEO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD2152 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Low Saturation Medium Current Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage

2SD2150SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR SOT-893. EMITTER 4.6B4.41.61.8Features1.41.4 Excellent current-to-gain characteristics 2.64.252.43.75 Low collector saturation voltage VCE(sat) 0.8 VCE(sat)=0.5V(max) for IC/IB=2A/0.1A MIN0.530.400.480.44 2x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted)

2SD2150NPN Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage40VCEOVCollector-Emitter Voltage 20VEBOVEmitter-Base Voltage 6Collector Current IC 3 ACollector Power Dissipation PD 500 mWJunction TemperatureTj150CTstg -55 t

2SD2150(BR3DG2150T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SB1424(BR3CG1424T)Low VCE(sat),excellent current gain characteristic, Complementary to 2SB1424(BR3CG1424T). / Applications

2SD2159(BR3DA2159) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features Low saturation voltage. / Applications Medium power amplifier applications. / Equivalent Circuit / Pinning

ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 20 VEmitter Base Voltage VEBO 6 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 5 1) 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature

SMD Type TransistorsNPN Transistors2SD21501.70 0.1 Features Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) Complementary to 2SB14120.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

SMD Type TransistorsNPN Transistors2SD21531.70 0.1 Features Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA Excellent DC current gain characteristics.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25

2SD2150NPNGeneral use transistor1.2W 3A 30V 4ApplicationsCan be used for switching and amplifying in 1 2 3 various electrical and electronic equipments. SOT-89 MAX RATINGParameters Symbol RatingUnit VCEO Collectoremitter voltageIB=0 30 V VCBO V Collectorbase voltageIE=0 40 VEBO Emitter base voltageIC=0 5 V IC A Collector curren

isc Silicon NPN Power Transistor 2SD2151DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 6ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2156DESCRIPTIONHigh DC Current gainLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD