2SD216 Todos los transistores

 0.1. Size:128K  nec
 2sd2164.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT mm) for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, b

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 2sd2163.pdf

DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) speed high-current switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor driv

 0.3. Size:130K  nec
 2sd2161.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive ORDERING INFORMATION from the IC output. This transistor is ideal for motor drivers and Ordering Name Package solenoid drivers in such as OA and FA equipment.

 0.4. Size:118K  nec
 2sd2165.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT mm) for high hFE. This transistor is ideal for simplifying drive circuits and 4.5 0.2 10.0 0.3 reducing power dissipation because its hFE is as high as that of

 0.5. Size:112K  nec
 2sd2162.pdf

DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive ORDERING INFORMATION from the IC output. This transistor is ideal for motor drivers and Ordering Name Package solenoid drivers in such as OA and FA equipment.

 0.6. Size:51K  rohm
 2sd2167.pdf

2SD2167 Transistors Power Transistor (31 4V, 2A) 2SD2167 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 4.0 2) Zener diode has low voltage dispersion. 1.0 2.5 0.5 3) Strong protection against reverse power surges due (1) to low loads. (2) 4) PC=2 W (on 40 40 0.7mm ceramic board) (3) (1) Base(Gate) (2) Collector(Drain) (3) Emitt

 0.7. Size:159K  rohm
 2sd2098 2sd2166.pdf

Transistors Low VCE(sat) Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type NPN silicon transistor (96-229-D204) 252 Trans

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 2sd2166.pdf

2SD2166(BR3DA2166QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features , , 2SB1436(BR3CA1436QF) Low VCE(sat), excellent DC current gain, complements the 2SB1436(BR3CA1436QF). / Applications

 0.9. Size:889K  kexin
 2sd2167.pdf

SMD Type Transistors NPN Transistors 2SD2167 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=27V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 27 Collector - Emitter Voltage VCEO 27 V Emitter - Base Voltage VEBO

 0.10. Size:221K  inchange semiconductor
 2sd2163.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2163 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 10A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be ideal for direct driving from the IC output of devices such as pulse motor

 0.11. Size:200K  inchange semiconductor
 2sd2161.pdf

isc Silicon NPN Darlington Power Transistor 2SD2161 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 2A) FE CE C Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 2A, I = 2mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designe

 0.12. Size:200K  inchange semiconductor
 2sd2165.pdf

isc Silicon NPN Darlington Power Transistor 2SD2165 DESCRIPTION High DC Current Gain- h = 800(MIN)@ (V = 5V, I = 1A) FE CE C Low Collector-Emitter Saturation Voltage V =1V(MIN)@ (I = 3V, I = 30mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use low frequency amplifilier and low switching speed a

 0.13. Size:229K  inchange semiconductor
 2sd2162.pdf

isc Silicon NPN Darlington Power Transistor 2SD2162 DESCRIPTION High hFE due to Darlington connection H 2,000 @(V = 2.0 V, I = 3.0 A) FE CE C Low Collector Saturation Voltage- V 1.5V @ (I =3A, I = 3mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low- spe