2SD2162 Todos los transistores

 

2SD2162 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD2162
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5000
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de 2SD2162

   - Selección ⓘ de transistores por parámetros

 

2SD2162 Datasheet (PDF)

 ..1. Size:112K  nec
2sd2162.pdf pdf_icon

2SD2162

DATA SHEETSILICON POWER TRANSISTOR2SD2162NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2162 is a Darlington power transistor that can directly drive ORDERING INFORMATIONfrom the IC output. This transistor is ideal for motor drivers andOrdering Name Packagesolenoid drivers in such as OA and FA equipment.

 ..2. Size:229K  inchange semiconductor
2sd2162.pdf pdf_icon

2SD2162

isc Silicon NPN Darlington Power Transistor 2SD2162DESCRIPTIONHigh hFE due to Darlington connection: H 2,000 @(V = 2.0 V, I = 3.0 A)FE CE CLow Collector Saturation Voltage-: V 1.5V @ (I =3A, I = 3mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-spe

 8.1. Size:128K  nec
2sd2164.pdf pdf_icon

2SD2162

DATA SHEETSILICON POWER TRANSISTOR2SD2164NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm)for high hFE. This transistor is ideal for simplifying drive circuits andreducing power dissipation because its hFE is as high as that ofDarlington transistors, b

 8.2. Size:97K  nec
2sd2163.pdf pdf_icon

2SD2162

DATA SHEETDARLINGTON POWER TRANSISTOR2SD2163NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS ANDLOW-SPEED HIGH-CURRENT SWITCHINGThe 2SD2163 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)speed high-current switching. This transistor is ideal for directdriving from the IC output of devices such as pulse motor driv

Otros transistores... 2SD2151 , 2SD2155 , 2SD2156 , 2SD2157 , 2SD2158 , 2SD215F , 2SD216 , 2SD2161 , S8050 , 2SD2163 , 2SD216F , 2SD217 , 2SD2176 , 2SD2177 , 2SD2178 , 2SD2179 , 2SD218 .

History: 3DD2499 | 2SB598 | 2SA121

 

 
Back to Top

 


 
.