2SD2162 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETSILICON POWER TRANSISTOR2SD2162NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2162 is a Darlington power transistor that can directly drive ORDERING INFORMATIONfrom the IC output. This transistor is ideal for motor drivers andOrdering Name Packagesolenoid drivers in such as OA and FA equipment.

isc Silicon NPN Darlington Power Transistor 2SD2162DESCRIPTIONHigh hFE due to Darlington connection: H 2,000 @(V = 2.0 V, I = 3.0 A)FE CE CLow Collector Saturation Voltage-: V 1.5V @ (I =3A, I = 3mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and low-spe

DATA SHEETSILICON POWER TRANSISTOR2SD2164NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm)for high hFE. This transistor is ideal for simplifying drive circuits andreducing power dissipation because its hFE is as high as that ofDarlington transistors, b

DATA SHEETDARLINGTON POWER TRANSISTOR2SD2163NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS ANDLOW-SPEED HIGH-CURRENT SWITCHINGThe 2SD2163 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)speed high-current switching. This transistor is ideal for directdriving from the IC output of devices such as pulse motor driv

DATA SHEETSILICON POWER TRANSISTOR2SD2161NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD2161 is a Darlington power transistor that can directly drive ORDERING INFORMATIONfrom the IC output. This transistor is ideal for motor drivers andOrdering Name Packagesolenoid drivers in such as OA and FA equipment.

DATA SHEETSILICON POWER TRANSISTOR2SD2165NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive circuits and 4.5 0.210.0 0.3reducing power dissipation because its hFE is as high as that of

2SD2167TransistorsPower Transistor (314V, 2A)2SD2167 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.4.02) Zener diode has low voltage dispersion.1.0 2.5 0.53) Strong protection against reverse power surges due(1) to low loads.(2)4) PC=2 W (on 40400.7mm ceramic board) (3)(1) Base(Gate)(2) Collector(Drain)(3) Emitt

TransistorsLow VCE(sat) Transistor(Strobe flash)2SD2098 / 2SD2118 / 2SD2097 / 2SD2166FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC / IB = 4A / 0.1A)2) Excellent DC current gain charac-teristics.3) Complements the2SB1386 / 2SB1412 / 2SB1326 /2SB1436.FStructureEpitaxial planar typeNPN silicon transistor(96-229-D204)252Trans

2SD2166(BR3DA2166QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features ,, 2SB1436(BR3CA1436QF) Low VCE(sat), excellent DC current gain, complements the 2SB1436(BR3CA1436QF). / Applications

SMD Type TransistorsNPN Transistors2SD2167SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=27V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 27 Collector - Emitter Voltage VCEO 27 V Emitter - Base Voltage VEBO

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2163DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 10AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe ideal for direct driving from the IC output of devicessuch as pulse motor

isc Silicon NPN Darlington Power Transistor 2SD2161DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 2A, I = 2mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigne

isc Silicon NPN Darlington Power Transistor 2SD2165DESCRIPTIONHigh DC Current Gain-: h = 800(MIN)@ (V = 5V, I = 1A)FE CE CLow Collector-Emitter Saturation Voltage: V =1V(MIN)@ (I = 3V, I = 30mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use low frequency amplifilier and lowswitching speed a