2SD218 Todos los transistores

 ..1. Size:208K  inchange semiconductor
 2sd218.pdf

isc Silicon NPN Power Transistor 2SD218 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V (Max.)@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low saturation voltage Excellent current gain linearity ABSOLUTE MAXIMUM RATINGS(T =25

 0.1. Size:264K  1
 2sd2181.pdf

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request

 0.2. Size:34K  panasonic
 2sd2180.pdf

 0.3. Size:41K  panasonic
 2sd2185 e.pdf

Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1440 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.

 0.4. Size:37K  panasonic
 2sd2185.pdf

Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1440 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.

 0.5. Size:43K  panasonic
 2sd2184 e.pdf

Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1438 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute

 0.6. Size:38K  panasonic
 2sd2184.pdf

Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SB1438 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute

 0.7. Size:37K  panasonic
 2sd2182.pdf

 0.8. Size:857K  kexin
 2sd2185.pdf

SMD Type Transistors NPN Transistors 2SD2185 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=50V Complementary to 2SB1440 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V