2SD218
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD218
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO3
2SD218
Datasheet (PDF)
..1. Size:208K inchange semiconductor
2sd218.pdf 
isc Silicon NPN Power Transistor 2SD218DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow saturation voltageExcellent current gain linearityABSOLUTE MAXIMUM RATINGS(T =25
0.1. Size:264K 1
2sd2181.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request
0.3. Size:41K panasonic
2sd2185 e.pdf
Transistor2SD2185Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14401.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.
0.4. Size:37K panasonic
2sd2185.pdf
Transistor2SD2185Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14401.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipment45and automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4 0.
0.5. Size:43K panasonic
2sd2184 e.pdf
Transistor2SD2184Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14382.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute
0.6. Size:38K panasonic
2sd2184.pdf
Transistor2SD2184Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SB14382.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute
0.8. Size:857K kexin
2sd2185.pdf
SMD Type TransistorsNPN Transistors2SD2185SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=50V Complementary to 2SB14400.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
