2SD2206 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2206
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hFE): 4000
Encapsulados: TO92
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2SD2206 datasheet
2sd2206.pdf
2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2206 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha
2sd2200.pdf
Ordering number EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1451/2SD2200] cesses for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of
2sd2201.pdf
Ordering number EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features Package Dimensions Surface mount type device making the following unit mm possible. 2069B -Reduction in the number of manufacturing pro- [2SB1452/2SD2201] cesses for 2SB1452/2SD2201-applied equipment. -High density surface mount applications. -Small size of
Otros transistores... 2SD219F , 2SD22 , 2SD220 , 2SD2200 , 2SD2201 , 2SD2202 , 2SD2203 , 2SD2204 , 9014 , 2SD2209 , 2SD220F , 2SD221 , 2SD2210 , 2SD2214 , 2SD2216 , 2SD221F , 2SD222 .
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