2SD2240 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SD2240, 2SD2240ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification1.6 0.150.4 0.8 0.1 0.4FeaturesHigh collector to emitter voltage VCEO.1Low noise voltage NV.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings

Transistor2SD2240, 2SD2240ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification1.6 0.150.4 0.8 0.1 0.4FeaturesHigh collector to emitter voltage VCEO.1Low noise voltage NV.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings

2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2248 Hammer Drive, Pulse Motor Drive Applications Unit: mm For Inductive Load Drive High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) CE (sat)(I = 1 A, I = 1 mA) C B Built-in zener diode between collector and ba

Transistor2SD2249Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolut

Power Transistors2SD2242, 2SD2242ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90High-speed switchingAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0.10.35 0.1 1.05 0.1Parameter Symbol Ratings Un

Transistor2SD2249Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolut

2SD2247Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD2247Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mAEmitter current IE 100 mACollector power dis

isc Silicon NPN Darlington Power Transistor 2SD2241DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1.5A, V = 3VFE C CEComplement to Type 2SB1481Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP