2SD2248 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2248 Hammer Drive, Pulse Motor Drive Applications Unit mm For Inductive Load Drive High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) CE (sat) (I = 1 A, I = 1 mA) C B Built-in zener diode between collector and ba

Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification 1.6 0.15 0.4 0.8 0.1 0.4 Features High collector to emitter voltage VCEO. 1 Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings

Transistor 2SD2249 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolut

Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 5.0 0.1 Features 10.0 0.2 1.0 High foward current transfer ratio hFE 90 High-speed switching Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0.1 0.35 0.1 1.05 0.1 Parameter Symbol Ratings Un

Transistor 2SD2249 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolut

Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise Unit mm amplification 1.6 0.15 0.4 0.8 0.1 0.4 Features High collector to emitter voltage VCEO. 1 Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings

2SD2247 Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2247 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Emitter current IE 100 mA Collector power dis

isc Silicon NPN Darlington Power Transistor 2SD2241 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1.5A, V = 3V FE C CE Complement to Type 2SB1481 Minimum Lot-to-Lot variations for robust device performance and reliable operation AP