2SD2248 Todos los transistores

 

2SD2248 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2248

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.9 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hfe): 4000

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SD2248

 

2SD2248 Datasheet (PDF)

0.1. 2sd2248.pdf Size:100K _toshiba

2SD2248
2SD2248

2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2248 Hammer Drive, Pulse Motor Drive Applications Unit: mm For Inductive Load Drive High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) CE (sat)(I = 1 A, I = 1 mA) C B Built-in zener diode between collector and ba

8.1. 2sd2241.pdf Size:177K _toshiba

2SD2248
2SD2248

8.2. 2sd2242.pdf Size:61K _panasonic

2SD2248
2SD2248

Power Transistors2SD2242, 2SD2242ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90High-speed switchingAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0.10.35 0.1 1.05 0.1Parameter Symbol Ratings Un

 8.3. 2sd2249.pdf Size:40K _panasonic

2SD2248
2SD2248

Transistor2SD2249Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolut

8.4. 2sd2240 e.pdf Size:40K _panasonic

2SD2248
2SD2248

Transistor2SD2240, 2SD2240ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification1.6 0.150.4 0.8 0.1 0.4FeaturesHigh collector to emitter voltage VCEO.1Low noise voltage NV.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings

 8.5. 2sd2240.pdf Size:37K _panasonic

2SD2248
2SD2248

Transistor2SD2240, 2SD2240ASilicon NPN epitaxial planer typeFor high breakdown voltage low-frequency and low-noiseUnit: mmamplification1.6 0.150.4 0.8 0.1 0.4FeaturesHigh collector to emitter voltage VCEO.1Low noise voltage NV.SS-Mini type package, allowing downsizing of the equipment3and automatic insertion through the tape packing.2Absolute Maximum Ratings

8.6. 2sd2249 e.pdf Size:45K _panasonic

2SD2248
2SD2248

Transistor2SD2249Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolut

8.7. 2sd2247.pdf Size:31K _hitachi

2SD2248
2SD2248

2SD2247Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD2247Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mAEmitter current IE 100 mACollector power dis

8.8. 2sd2241.pdf Size:195K _inchange_semiconductor

2SD2248
2SD2248

isc Silicon NPN Darlington Power Transistor 2SD2241DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1.5A, V = 3VFE C CEComplement to Type 2SB1481Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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