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2SD2250 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2250

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 140 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 6000

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD2250

 

2SD2250 Datasheet (PDF)

0.1. 2sd2250.pdf Size:57K _panasonic

2SD2250
2SD2250

Power Transistors2SD2250Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149020.0 0.5 5.0 0.33.0FeaturesOptimum for 80W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

0.2. 2sd2250.pdf Size:205K _inchange_semiconductor

2SD2250
2SD2250

isc Silicon NPN Darlington Power Transistor 2SD2250DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1490Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

 8.1. 2sd2257.pdf Size:135K _toshiba

2SD2250
2SD2250

2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Complementary to 2SB1495 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 1

8.2. 2sd2251.pdf Size:95K _sanyo

2SD2250
2SD2250

Ordering number:EN3741ANPN Triple Diffused Planar Silicon Transistor2SD2251Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2251] On-chip damper diode.16.05.63.43.12.82.0 2.01.00.61 : Base1

 8.3. 2sd2252.pdf Size:88K _sanyo

2SD2250
2SD2250

Ordering number:EN3320NPN Triple Diffused Planar Silicon Transistor2SD2252Color TV Horizontal DeflectionOutput ApplicationsApplications Package Dimensions Color TV horizontal diflection output.unit:mm Color display horizontal deflection output.2039D[2SD2252]16.05.6Features3.43.1 High-speed : tf=100ns. High breakdown voltage : VCBO=1500V. High r

8.4. 2sd2259.pdf Size:38K _panasonic

2SD2250
2SD2250

Transistor2SD2259Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3

 8.5. 2sd2258 e.pdf Size:56K _panasonic

2SD2250
2SD2250

Transistor2SD2258 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.5 0.5 2.5 0.51 2 3Absolute Maximum Ratings (Ta=25C)Note: In a

8.6. 2sd2259 e.pdf Size:43K _panasonic

2SD2250
2SD2250

Transistor2SD2259Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat). 0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3

8.7. 2sb1492 2sd2254 2sd2254.pdf Size:57K _panasonic

2SD2250
2SD2250

Power Transistors2SD2254Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149220.0 0.5 5.0 0.33.0FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

8.8. 2sd2258.pdf Size:51K _panasonic

2SD2250
2SD2250

Transistor2SD2258 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.5 0.5 2.5 0.51 2 3Absolute Maximum Ratings (Ta=25C)Note: In a

8.9. 2sd2255.pdf Size:55K _panasonic

2SD2250
2SD2250

Power Transistors2SD2255Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB149315.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

8.10. 2sd2256.pdf Size:36K _hitachi

2SD2250
2SD2250

2SD2256Silicon NPN Triple DiffusedADE-208-928 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifier complementary pair with 2SB1494Features High breakdown voltage and high current (VCEO = 120 V, IC = 25 A) Built-in C-E diodeOutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter13232SD2256Absolute Maximum Ratings (Ta = 25C)Item

8.11. 2sd2253.pdf Size:99K _wingshing

2SD2250

2SD2253Silicon NPN Triple Diffused Power TransistorGENERAL DESCRIPTION HORIZONAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TVHigh Speed Switching ApplicationsTO-3PMQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-Base voltageVCB0 - - 1700 VCollector-emitter voltage (open base)VCEO - 600 VCollector current (DC)IC - 6 ACollector curren

8.12. 2sd2251.pdf Size:200K _inchange_semiconductor

2SD2250
2SD2250

isc Silicon NPN Power Transistor 2SD2251DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

8.13. 2sd2253.pdf Size:198K _inchange_semiconductor

2SD2250
2SD2250

isc Silicon NPN Power Transistor 2SD2253DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

8.14. 2sd2256.pdf Size:75K _inchange_semiconductor

2SD2250
2SD2250

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT

8.15. 2sd2257.pdf Size:195K _inchange_semiconductor

2SD2250
2SD2250

isc Silicon NPN Darlington Power Transistor 2SD2257DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEComplement to Type 2SB1495Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsHammer drive, p

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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