2SD226A Todos los transistores

 8.1. Size:34K  sanyo
 2sd2261.pdf

Ordering number ENN5311A NPN Epitaxial Planar Silicon Transistor 2SD2261 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit mm 2038A Features [2SD2261] 4.5 Darlington connection. 1.5 1.6 High DC current gain. DC current gain is less affected by temperature. Small-sized package. 0.4 0.5 3 2 1 0.4 1.

 8.2. Size:45K  panasonic
 2sd2260 e.pdf

Transistor 2SD2260 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector breakdown voltage. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings

 8.3. Size:53K  panasonic
 2sd2266.pdf

Power Transistors 2SD2266 Silicon NPN triple diffusion planar type For power switching Unit mm 5.0 0.1 Features 10.0 0.2 1.0 High-speed switching 90 Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C1.0 2.25 0.2 Absolute Maximum Ratings (TC=25 C) 0.65 0.1 0.35 0.1 1.05 0.1 Parameter Symbol Ratings Unit

 8.4. Size:33K  hitachi
 2sd2263.pdf

2SD2263 Silicon NPN Epitaxial Application Low frequency power amplifier Features Build in zener diode for surge absorb. Suitable for relay drive with small power loss. Outline TO-92 (1) 2 ID 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD2263 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter volt

 8.5. Size:937K  kexin
 2sd2261.pdf

SMD Type Transistors NPN Transistors 2SD2261 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2.5A Collector Emitter Voltage VCEO=60V C 0.42 0.1 0.46 0.1 B 1.Base 2.Collector 7k 500 3.Emitter E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 60 V Emit

 8.6. Size:181K  inchange semiconductor
 2sd226.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD226 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a