2SD227 Todos los transistores

 0.1. Size:219K  toshiba
 2sd2271.pdf

 0.2. Size:57K  panasonic
 2sd2276.pdf

Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1503 20.0 0.5 5.0 0.3 3.0 Features Optimum for 110W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

 0.3. Size:56K  panasonic
 2sd2273.pdf

Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1500 20.0 0.5 5.0 0.3 3.0 Features Optimum for 40W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

 0.4. Size:57K  panasonic
 2sd2275.pdf

Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1502 20.0 0.5 5.0 0.3 3.0 Features Optimum for 55W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

 0.5. Size:205K  inchange semiconductor
 2sd2276.pdf

isc Silicon NPN Darlington Power Transistor 2SD2276 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 7A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1503 Minimum Lot-to-Lot variations for robust device performance and reliable op

 0.6. Size:195K  inchange semiconductor
 2sd2271.pdf

isc Silicon NPN Darlington Power Transistor 2SD2271 DESCRIPTION High DC Current Gain- h = 500(Min)@ (V = 2V, I = 5A) FE CE C High Breakdown Voltage V (sus)=200V Min CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drive applications High current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 0.7. Size:204K  inchange semiconductor
 2sd2275.pdf

isc Silicon NPN Darlington Power Transistor 2SD2275 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 4A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 4A, I = 4mA) CE(sat) C B Complement to Type 2SB1502 Minimum Lot-to-Lot variations for robust device performance and reliable op