2SD2300 Datasheet. Equivalente

 ..1. Size:32K  hitachi
 2sd2300.pdf

2SD2300 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features High breakdown voltage VCBO = 1500 V Built-in damper diode type Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SD2300 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 6V

 ..2. Size:198K  inchange semiconductor
 2sd2300.pdf

isc Silicon NPN Power Transistor 2SD2300 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for CTV horizontal deflection output applications. ABSOLUTE MAXIMU

 9.1. Size:178K  toshiba
 2sd2387.pdf

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1558 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

 9.2. Size:200K  toshiba
 2sd2353.pdf

 9.3. Size:199K  toshiba
 2sd2352.pdf

 9.4. Size:173K  toshiba
 2sd2386.pdf

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1557 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

 9.5. Size:175K  toshiba
 2sd2384.pdf

2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2384 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1555 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

 9.6. Size:179K  toshiba
 2sd2385.pdf

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1556 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

 9.7. Size:68K  sanyo
 2sd2324.pdf

Ordering number EN4664 NPN Epitaxial Planar Silicon Transistor 2SD2324 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains a diode between colletor and emitter. 2018B Contains a bias resistor between base and emitter. [2SD2324] Large current capacity. 0.4 Small-sized package facilitating the realization of 0.16

 9.8. Size:114K  nec
 2sd2383.pdf

DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SD2383 is an element realizing high voltage in small 2.8 0.2 dimension. This transistor is ideal for downsizing sets +0.1 0.65 0.15 1.5 requiring high voltage. 2 FEATURES High voltage 3 Small dimension 1 ORDERING

 9.9. Size:370K  rohm
 2sd2399.pdf

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

 9.10. Size:66K  rohm
 2sd2195 2sd1980 2sd1867 2sd2398.pdf

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

 9.11. Size:37K  rohm
 2sd2395.pdf

2SB1566 Transistors Transistors 2SD2395 (94L-459-B350) (94L-1101-D350) 296

 9.12. Size:134K  rohm
 2sd2318.pdf

High-current gain Power Transistor (60V, 3A) 2SD2318 Features Dimensions (Unit mm) 1) High DC current gain. 2) Low saturation voltage. 5.5 1.5 (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 0.9 Absolute maximum ratings (Ta=25 C) C0.5 Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V 0.8Min. (1) Base 1.5 Collector-emitter voltage VCEO 60 V 2.5 (2) Collec

 9.13. Size:1225K  rohm
 2sd2351.pdf

2SD2351 Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-323 Parameter Value SC-70 VCEO 50V IC 150mA UMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA) lApplication l LOW FREQUENCY AMPLIFIER lPack

 9.14. Size:1345K  rohm
 2sd2391.pdf

2SD2391 Datasheet Middle Power Transistor (60V / 2A) lOutline l SOT-89 Parameter Value SC-62 VCEO 60V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=130mV at IC/IB=1A/50mA. 2)Collector-emitter voltage=60V 3)PD=2W (Mounted on a ceramic board (40 40 0.7mm) ). 4)Complementary PNP Types 2SB

 9.15. Size:71K  rohm
 2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)

 9.16. Size:85K  rohm
 2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base

 9.17. Size:41K  rohm
 2sd2396.pdf

2SD2396 Transistors Transistors 2SC5060 (96-819-D351) (96-733-D416) 323

 9.18. Size:53K  rohm
 2sd2394.pdf

2SD2394 Transistors Power Transistor (60V, 3A) 2SD2394 Features External dimensions (Units mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A) 10.0 4.5 3.2 2.8 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) ( ) (1) (2) (3) (3) Emit

 9.19. Size:39K  panasonic
 2sd2359 e.pdf

Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 3.0

 9.20. Size:39K  panasonic
 2sd2357 e.pdf

Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1537 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.

 9.21. Size:38K  panasonic
 2sd2345.pdf

Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Low noise voltage NV. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to b

 9.22. Size:45K  panasonic
 2sd2374.pdf

Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548 and 2SB1548A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 4.6 0.2 9.9 0.3 Low collector to emitter saturation voltage VCE(sat) 2.9 0.2 Full-pack package which can be installed to the heat sink with one scr

 9.23. Size:43K  panasonic
 2sd2321 e.pdf

Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V 1.2

 9.24. Size:45K  panasonic
 2sd2358.pdf

Transistors 2SD2358 Silicon NPN epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency output amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1538 Features 0.65 max. Low collector to emitter saturation voltage VCE(sat)

 9.25. Size:35K  panasonic
 2sd2359.pdf

Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 3.0

 9.26. Size:91K  panasonic
 2sd2328.pdf

This Material Copyrighted By Its Respective Manufacturer

 9.27. Size:36K  panasonic
 2sd2357.pdf

Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1537 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.

 9.28. Size:39K  panasonic
 2sd2321.pdf

Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V 1.2

 9.29. Size:80K  panasonic
 2sd2375.pdf

Power Transistors 2SD2375 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For power amplification with high forward current transfer ratio 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE which has satisfactory lin- earity Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6 0.1 1.6 0.2 0.8

 9.30. Size:42K  panasonic
 2sd2345 e.pdf

Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Low noise voltage NV. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to b

 9.31. Size:41K  hitachi
 2sd2337.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.32. Size:143K  no
 2sd2348.pdf

 9.33. Size:47K  no
 2sd2349.pdf

 9.34. Size:39K  no
 2sd2382.pdf

Power Transistor 2SD2382 Absolute Maximum Ratings Electrical Characteristics External Dimensions FM20 (full-mold) (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Symbol Test Conditions Ratings Unit 4.2 V 65 5 V I V = 60V 10max A CBO CBO CB 10.0 3.3 2.8 C0.5 V 65 5 V I V = 6V 10max A CEO EBO EB V 6 V V I = 50mA 60 to 70 V EBO CEO C I 6 (pulse 10) A h V = 1V, I = 1A 700

 9.35. Size:69K  wingshing
 2sd235.pdf

2SD235 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB435 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 25 W Junction

 9.36. Size:3035K  jiangsu
 2sd2391.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR (NPN) SOT-89-3L FEATURES Low VCE(sat) 1.BASE 1 2 3 2.COLLECTOR Marking DT 3.EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

 9.37. Size:776K  jiangsu
 2sd2396.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F 2SD2396 TRANSISTOR (NPN) FEATURES Available in TO-220 F package Darling connection provides high dc current gain (hFE) 1 2 1. BASE 3 Large collector power dissipation Low frequency and Power amplifier 2. COLLECTOR 3. EMITTER Equivalent Circuit 2SD2396=D

 9.38. Size:25K  sanken-ele
 2sd2389.pdf

Equivalent circuit C B Darlington 2SD2389 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2389 Symbol Conditions 2SD2389 Unit Unit 0.2 4.8 0.4 15.6 VCBO 160 ICBO VCB

 9.39. Size:25K  sanken-ele
 2sd2390.pdf

C Equivalent circuit B Darlington 2SD2390 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SD2390 Unit Symbol Conditions 2SD2390 Unit 0.2 4.8 0.4 15.6 VCBO 160 V ICBO VC

 9.40. Size:426K  blue-rocket-elect
 2sd2353.pdf

2SD2353(BR3DA2353F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features ,V CESAT High DC current gain ,low collector saturation voltage. / Applications For power amplification. / E

 9.41. Size:103K  blue-rocket-elect
 2sd2395.pdf

2SD2395(3DA2395) NPN /SILICON NPN TRANSISTOR , Purpose Voltage regulator, DC-DC converter and relay driver audio frequency power Amplifier. , , 2SB1566(3CA1566) Features Low V ,wide SOA, complements the 2SB1566(3

 9.42. Size:577K  blue-rocket-elect
 2sd2396.pdf

 9.43. Size:794K  semtech
 st2sd2391u.pdf

ST 2SD2391U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Peak Collector Current (PW = 10 ms) ICP 6 A 0.5 Ptot W Total Power Dissipation 2 1) Junction Temperature Tj 150 Storage Temperatu

 9.44. Size:223K  tysemi
 2sd2318.pdf

SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SD2318 TO-252 Unit mm +0.1

 9.45. Size:989K  kexin
 2sd2324.pdf

SMD Type Transistors NPN Transistors 2SD2324 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=800mA 1 2 Collector Emitter Voltage VCEO=15V +0.05 0.95+0.1 -0.1 0.1 -0.01 -0.1 C 1.9+0.1 1.Base B 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20

 9.46. Size:822K  kexin
 2sd2359.pdf

SMD Type Transistors NPN Transistors 2SD2359 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SB1539 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Col

 9.47. Size:823K  kexin
 2sd2357.pdf

SMD Type Transistors NPN Transistors 2SD2357 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Complementary to 2SB1537 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCE

 9.48. Size:976K  kexin
 2sd2391.pdf

SMD Type Transistors NPN Transistors 2SD2391 1.70 0.1 Features Low saturation voltage Collector-emitter voltage =60V 0.42 0.1 Pc = 2W (on 40X40X0.7mm ceramic board). 0.46 0.1 Complements the 2SB1561. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Volt

 9.49. Size:629K  kexin
 2sd2383.pdf

SMD Type Transistors NPN Transistors 2SD2383 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=300V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collec

 9.50. Size:196K  inchange semiconductor
 2sd2399.pdf

isc Silicon NPN Darlington Power Transistor 2SD2399 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low fr

 9.51. Size:189K  inchange semiconductor
 2sd2333.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2333 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.52. Size:192K  inchange semiconductor
 2sd2340.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2340 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 3A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio r

 9.53. Size:115K  inchange semiconductor
 2sd2374 2sd2374a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION With TO-220F package Complement to type 2SB1548/1548A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified

 9.54. Size:194K  inchange semiconductor
 2sd2395.pdf

isc Silicon NPN Power Transistor 2SD2395 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1566 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.55. Size:199K  inchange semiconductor
 2sd2374.pdf

isc Silicon NPN Power Transistor 2SD2374 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = 1.2V(Max)@ (I = 3A, I = 0.375A) CE(sat) C B Complement to Type 2SB1548 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

 9.56. Size:207K  inchange semiconductor
 2sd2348.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2348 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Saturation Voltage High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.57. Size:206K  inchange semiconductor
 2sd2389.pdf

isc Silicon NPN Darlington Power Transistor 2SD2389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 6A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 6A, I = 6mA) CE(sat) C B Complement to Type 2SB1559 Minimum Lot-to-Lot variations for robust device performance and reliable op

 9.58. Size:213K  inchange semiconductor
 2sd234.pdf

isc Silicon NPN Power Transistor 2SD234 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB434 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXI

 9.59. Size:202K  inchange semiconductor
 2sd2328.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2328 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 3.0V(Max)@ I = 10A, I = 1A CE(sat) C B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications A

 9.60. Size:207K  inchange semiconductor
 2sd2349.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2349 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Saturation Voltage High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.61. Size:213K  inchange semiconductor
 2sd235.pdf

isc Silicon NPN Power Transistor 2SD235 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB435 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXI

 9.62. Size:244K  inchange semiconductor
 2sd2390.pdf

isc Silicon NPN Darlington Power Transistor 2SD2390 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 7A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 7A CE(sat) C Complement to Type 2SB1560 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applications

 9.63. Size:185K  inchange semiconductor
 2sd2397.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2397 DESCRIPTION High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Built-in zener diode between collector and base Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor Relay drive ABS

 9.64. Size:189K  inchange semiconductor
 2sd2335.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2335 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.65. Size:189K  inchange semiconductor
 2sd2331.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2331 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.66. Size:181K  inchange semiconductor
 2sd237.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD237 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.67. Size:83K  inchange semiconductor
 2sd2386.pdf

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION With TO-3P(I) package Complement to type 2SB1557 High breakdown voltage VCEO=140V(Min) APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitte

 9.68. Size:184K  inchange semiconductor
 2sd2398.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2398 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor R

 9.69. Size:204K  inchange semiconductor
 2sd2384.pdf

isc Silicon NPN Darlington Power Transistor 2SD2384 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000(Min)@I = 6A FE C Complement to Type 2SB1555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.70. Size:204K  inchange semiconductor
 2sd2385.pdf

isc Silicon NPN Darlington Power Transistor 2SD2385 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000(Min)@I = 7A FE C Complement to Type 2SB1556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.71. Size:199K  inchange semiconductor
 2sd2374a.pdf

isc Silicon NPN Power Transistor 2SD2374A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = 1.2V(Max)@ (I = 3A, I = 0.375A) CE(sat) C B Complement to Type 2SB1548A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

 9.72. Size:212K  inchange semiconductor
 2sd2396.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2396 DESCRIPTION Low Collector Saturation Voltage High DC current gain Large collector power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 9.73. Size:209K  inchange semiconductor
 2sd2394.pdf

isc Silicon NPN Power Transistor 2SD2394 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a