2SD2300 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2300 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features High breakdown voltage VCBO = 1500 V Built-in damper diode type Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SD2300 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 6V

isc Silicon NPN Power Transistor 2SD2300 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for CTV horizontal deflection output applications. ABSOLUTE MAXIMU

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1558 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1557 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2384 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1555 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit mm High breakdown voltage VCEO = 140 V (min) Complementary to 2SB1556 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

Ordering number EN4664 NPN Epitaxial Planar Silicon Transistor 2SD2324 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains a diode between colletor and emitter. 2018B Contains a bias resistor between base and emitter. [2SD2324] Large current capacity. 0.4 Small-sized package facilitating the realization of 0.16

DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SD2383 is an element realizing high voltage in small 2.8 0.2 dimension. This transistor is ideal for downsizing sets +0.1 0.65 0.15 1.5 requiring high voltage. 2 FEATURES High voltage 3 Small dimension 1 ORDERING

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

2SB1566 Transistors Transistors 2SD2395 (94L-459-B350) (94L-1101-D350) 296

High-current gain Power Transistor (60V, 3A) 2SD2318 Features Dimensions (Unit mm) 1) High DC current gain. 2) Low saturation voltage. 5.5 1.5 (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 0.9 Absolute maximum ratings (Ta=25 C) C0.5 Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V 0.8Min. (1) Base 1.5 Collector-emitter voltage VCEO 60 V 2.5 (2) Collec

2SD2351 Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-323 Parameter Value SC-70 VCEO 50V IC 150mA UMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA) lApplication l LOW FREQUENCY AMPLIFIER lPack

2SD2391 Datasheet Middle Power Transistor (60V / 2A) lOutline l SOT-89 Parameter Value SC-62 VCEO 60V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=130mV at IC/IB=1A/50mA. 2)Collector-emitter voltage=60V 3)PD=2W (Mounted on a ceramic board (40 40 0.7mm) ). 4)Complementary PNP Types 2SB

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base

2SD2396 Transistors Transistors 2SC5060 (96-819-D351) (96-733-D416) 323

2SD2394 Transistors Power Transistor (60V, 3A) 2SD2394 Features External dimensions (Units mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A) 10.0 4.5 3.2 2.8 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) ( ) (1) (2) (3) (3) Emit

Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 3.0

Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1537 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.

Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Low noise voltage NV. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to b

Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548 and 2SB1548A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 4.6 0.2 9.9 0.3 Low collector to emitter saturation voltage VCE(sat) 2.9 0.2 Full-pack package which can be installed to the heat sink with one scr

Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V 1.2

Transistors 2SD2358 Silicon NPN epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency output amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1538 Features 0.65 max. Low collector to emitter saturation voltage VCE(sat)

Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 3.0

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Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1537 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.

Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V 1.2

Power Transistors 2SD2375 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For power amplification with high forward current transfer ratio 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE which has satisfactory lin- earity Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6 0.1 1.6 0.2 0.8

Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Low noise voltage NV. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to b

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Power Transistor 2SD2382 Absolute Maximum Ratings Electrical Characteristics External Dimensions FM20 (full-mold) (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Symbol Test Conditions Ratings Unit 4.2 V 65 5 V I V = 60V 10max A CBO CBO CB 10.0 3.3 2.8 C0.5 V 65 5 V I V = 6V 10max A CEO EBO EB V 6 V V I = 50mA 60 to 70 V EBO CEO C I 6 (pulse 10) A h V = 1V, I = 1A 700

2SD235 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB435 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 25 W Junction

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR (NPN) SOT-89-3L FEATURES Low VCE(sat) 1.BASE 1 2 3 2.COLLECTOR Marking DT 3.EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F 2SD2396 TRANSISTOR (NPN) FEATURES Available in TO-220 F package Darling connection provides high dc current gain (hFE) 1 2 1. BASE 3 Large collector power dissipation Low frequency and Power amplifier 2. COLLECTOR 3. EMITTER Equivalent Circuit 2SD2396=D

Equivalent circuit C B Darlington 2SD2389 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) Application Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2389 Symbol Conditions 2SD2389 Unit Unit 0.2 4.8 0.4 15.6 VCBO 160 ICBO VCB

C Equivalent circuit B Darlington 2SD2390 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SD2390 Unit Symbol Conditions 2SD2390 Unit 0.2 4.8 0.4 15.6 VCBO 160 V ICBO VC

2SD2353(BR3DA2353F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features ,V CESAT High DC current gain ,low collector saturation voltage. / Applications For power amplification. / E

2SD2395(3DA2395) NPN /SILICON NPN TRANSISTOR , Purpose Voltage regulator, DC-DC converter and relay driver audio frequency power Amplifier. , , 2SB1566(3CA1566) Features Low V ,wide SOA, complements the 2SB1566(3

ST 2SD2391U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Peak Collector Current (PW = 10 ms) ICP 6 A 0.5 Ptot W Total Power Dissipation 2 1) Junction Temperature Tj 150 Storage Temperatu

SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification 2SD2318 TO-252 Unit mm +0.1

SMD Type Transistors NPN Transistors 2SD2324 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=800mA 1 2 Collector Emitter Voltage VCEO=15V +0.05 0.95+0.1 -0.1 0.1 -0.01 -0.1 C 1.9+0.1 1.Base B 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20

SMD Type Transistors NPN Transistors 2SD2359 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SB1539 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Col

SMD Type Transistors NPN Transistors 2SD2357 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Complementary to 2SB1537 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCE

SMD Type Transistors NPN Transistors 2SD2391 1.70 0.1 Features Low saturation voltage Collector-emitter voltage =60V 0.42 0.1 Pc = 2W (on 40X40X0.7mm ceramic board). 0.46 0.1 Complements the 2SB1561. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Volt

SMD Type Transistors NPN Transistors 2SD2383 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=300V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collec

isc Silicon NPN Darlington Power Transistor 2SD2399 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low fr

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2333 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2340 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 3A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio r

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION With TO-220F package Complement to type 2SB1548/1548A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified

isc Silicon NPN Power Transistor 2SD2395 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1566 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD2374 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = 1.2V(Max)@ (I = 3A, I = 0.375A) CE(sat) C B Complement to Type 2SB1548 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2348 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Saturation Voltage High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon NPN Darlington Power Transistor 2SD2389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 6A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 6A, I = 6mA) CE(sat) C B Complement to Type 2SB1559 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Power Transistor 2SD234 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB434 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2328 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 3.0V(Max)@ I = 10A, I = 1A CE(sat) C B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2349 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Saturation Voltage High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon NPN Power Transistor 2SD235 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB435 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXI

isc Silicon NPN Darlington Power Transistor 2SD2390 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 7A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 7A CE(sat) C Complement to Type 2SB1560 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applications

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2397 DESCRIPTION High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Built-in zener diode between collector and base Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor Relay drive ABS

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2335 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2331 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD237 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION With TO-3P(I) package Complement to type 2SB1557 High breakdown voltage VCEO=140V(Min) APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitte

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2398 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor R

isc Silicon NPN Darlington Power Transistor 2SD2384 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000(Min)@I = 6A FE C Complement to Type 2SB1555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Darlington Power Transistor 2SD2385 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000(Min)@I = 7A FE C Complement to Type 2SB1556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Power Transistor 2SD2374A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = 1.2V(Max)@ (I = 3A, I = 0.375A) CE(sat) C B Complement to Type 2SB1548A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2396 DESCRIPTION Low Collector Saturation Voltage High DC current gain Large collector power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon NPN Power Transistor 2SD2394 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a