2SD232F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number EN4664 NPN Epitaxial Planar Silicon Transistor 2SD2324 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains a diode between colletor and emitter. 2018B Contains a bias resistor between base and emitter. [2SD2324] Large current capacity. 0.4 Small-sized package facilitating the realization of 0.16

Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V 1.2

This Material Copyrighted By Its Respective Manufacturer

Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V 1.2

SMD Type Transistors NPN Transistors 2SD2324 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=800mA 1 2 Collector Emitter Voltage VCEO=15V +0.05 0.95+0.1 -0.1 0.1 -0.01 -0.1 C 1.9+0.1 1.Base B 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2328 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 3.0V(Max)@ I = 10A, I = 1A CE(sat) C B High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications A