2SD237 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD237
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO66
Búsqueda de reemplazo de transistor bipolar 2SD237
2SD237 Datasheet (PDF)
2sd237.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD237DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose power amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a
2sd2374.pdf
Power Transistors2SD2374, 2SD2374ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1548 and 2SB1548AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity4.6 0.2 9.9 0.3Low collector to emitter saturation voltage VCE(sat)2.9 0.2Full-pack package which can be installed to the heat sink withone scr
2sd2375.pdf
Power Transistors2SD2375Silicon NPN triple diffusion planar typeUnit: mm4.60.2For power amplification with high forward current transfer ratio 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE which has satisfactory lin-earity Full-pack package which can be installed to the heat sink with onescrew1.40.22.60.11.60.20.8
2sd2374 2sd2374a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION With TO-220F package Complement to type 2SB1548/1548A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified
2sd2374.pdf
isc Silicon NPN Power Transistor 2SD2374DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = 1.2V(Max)@ (I = 3A, I = 0.375A)CE(sat) C BComplement to Type 2SB1548Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
2sd2374a.pdf
\isc Silicon NPN Power Transistor 2SD2374ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = 1.2V(Max)@ (I = 3A, I = 0.375A)CE(sat) C BComplement to Type 2SB1548AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLIC
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N834 | 2N677C
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050