2SD237 Datasheet. Equivalente

 ..1. Size:181K  inchange semiconductor
 2sd237.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD237 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 0.1. Size:45K  panasonic
 2sd2374.pdf

Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548 and 2SB1548A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 4.6 0.2 9.9 0.3 Low collector to emitter saturation voltage VCE(sat) 2.9 0.2 Full-pack package which can be installed to the heat sink with one scr

 0.2. Size:80K  panasonic
 2sd2375.pdf

Power Transistors 2SD2375 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For power amplification with high forward current transfer ratio 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE which has satisfactory lin- earity Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6 0.1 1.6 0.2 0.8

 0.3. Size:115K  inchange semiconductor
 2sd2374 2sd2374a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION With TO-220F package Complement to type 2SB1548/1548A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified

 0.4. Size:199K  inchange semiconductor
 2sd2374.pdf

isc Silicon NPN Power Transistor 2SD2374 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = 1.2V(Max)@ (I = 3A, I = 0.375A) CE(sat) C B Complement to Type 2SB1548 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

 0.5. Size:199K  inchange semiconductor
 2sd2374a.pdf

isc Silicon NPN Power Transistor 2SD2374A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = 1.2V(Max)@ (I = 3A, I = 0.375A) CE(sat) C B Complement to Type 2SB1548A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC