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2SD2385B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2385B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 30 MHz

Capacitancia de salida (Cc): 110 pF

Ganancia de corriente contínua (hfe): 12000

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD2385B

 

2SD2385B Datasheet (PDF)

3.1. 2sd2385.pdf Size:179K _toshiba

2SD2385B
2SD2385B

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

3.2. 2sd2385.pdf Size:259K _inchange_semiconductor

2SD2385B
2SD2385B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2385 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Complement to Type 2SB1556 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO C

 4.1. 2sd2384.pdf Size:175K _toshiba

2SD2385B
2SD2385B

2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

4.2. 2sd2387.pdf Size:178K _toshiba

2SD2385B
2SD2385B

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

 4.3. 2sd2386.pdf Size:173K _toshiba

2SD2385B
2SD2385B

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V

4.4. 2sd2383.pdf Size:114K _nec

2SD2385B
2SD2385B

DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD2383 is an element realizing high voltage in small 2.8 0.2 dimension. This transistor is ideal for downsizing sets +0.1 0.65 0.15 1.5 requiring high voltage. 2 FEATURES High voltage 3 Small dimension 1 ORDERING INFORMATI

 4.5. 2sd2382.pdf Size:39K _no

2SD2385B

Power Transistor 2SD2382 Absolute Maximum Ratings Electrical Characteristics External Dimensions FM20 (full-mold) (Ta=25?C) (Ta=25?C) Symbol Ratings Unit Symbol Test Conditions Ratings Unit 4.2 V 65 5 V I V = 60V 10max A CBO CBO CB 10.0 3.3 2.8 C0.5 V 65 5 V I V = 6V 10max A CEO EBO EB V 6 V V I = 50mA 60 to 70 V EBO CEO C I 6 (pulse 10) A h V = 1V, I = 1A 700 to 3000 C

4.6. 2sd2389.pdf Size:25K _sanken-ele

2SD2385B

Equivalent circuit C B Darlington 2SD2389 (70?) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559) Application : Audio, Series Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SD2389 Symbol Conditions 2SD2389 Unit Unit 0.2 4.8 0.4 15.6 VCBO 160 ICBO VCB=160V 100

4.7. 2sd2384.pdf Size:229K _inchange_semiconductor

2SD2385B
2SD2385B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2384 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 6A ·Complement to Type 2SB1555 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO C

4.8. 2sd2389.pdf Size:156K _inchange_semiconductor

2SD2385B
2SD2385B

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2389 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SB1559 Ў¤ High DC current gain APPLICATIONS Ў¤ Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximu

4.9. 2sd2386.pdf Size:83K _inchange_semiconductor

2SD2385B
2SD2385B

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Emitter

4.10. 2sd2383.pdf Size:629K _kexin

2SD2385B
2SD2385B

SMD Type Transistors NPN Transistors 2SD2383 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=300V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collec

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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