2SD2390O Todos los transistores

 7.1. Size:25K  sanken-ele
 2sd2390.pdf

C Equivalent circuit B Darlington 2SD2390 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SD2390 Unit Symbol Conditions 2SD2390 Unit 0.2 4.8 0.4 15.6 VCBO 160 V ICBO VC

 7.2. Size:244K  inchange semiconductor
 2sd2390.pdf

isc Silicon NPN Darlington Power Transistor 2SD2390 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 7A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 7A CE(sat) C Complement to Type 2SB1560 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applications

 8.1. Size:370K  rohm
 2sd2399.pdf

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

 8.2. Size:66K  rohm
 2sd2195 2sd1980 2sd1867 2sd2398.pdf

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

 8.3. Size:37K  rohm
 2sd2395.pdf

2SB1566 Transistors Transistors 2SD2395 (94L-459-B350) (94L-1101-D350) 296

 8.4. Size:1345K  rohm
 2sd2391.pdf

2SD2391 Datasheet Middle Power Transistor (60V / 2A) lOutline l SOT-89 Parameter Value SC-62 VCEO 60V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=130mV at IC/IB=1A/50mA. 2)Collector-emitter voltage=60V 3)PD=2W (Mounted on a ceramic board (40 40 0.7mm) ). 4)Complementary PNP Types 2SB

 8.5. Size:71K  rohm
 2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)

 8.6. Size:41K  rohm
 2sd2396.pdf

2SD2396 Transistors Transistors 2SC5060 (96-819-D351) (96-733-D416) 323

 8.7. Size:53K  rohm
 2sd2394.pdf

2SD2394 Transistors Power Transistor (60V, 3A) 2SD2394 Features External dimensions (Units mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A) 10.0 4.5 3.2 2.8 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) ( ) (1) (2) (3) (3) Emit

 8.8. Size:3035K  jiangsu
 2sd2391.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR (NPN) SOT-89-3L FEATURES Low VCE(sat) 1.BASE 1 2 3 2.COLLECTOR Marking DT 3.EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

 8.9. Size:776K  jiangsu
 2sd2396.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F 2SD2396 TRANSISTOR (NPN) FEATURES Available in TO-220 F package Darling connection provides high dc current gain (hFE) 1 2 1. BASE 3 Large collector power dissipation Low frequency and Power amplifier 2. COLLECTOR 3. EMITTER Equivalent Circuit 2SD2396=D

 8.10. Size:103K  blue-rocket-elect
 2sd2395.pdf

2SD2395(3DA2395) NPN /SILICON NPN TRANSISTOR , Purpose Voltage regulator, DC-DC converter and relay driver audio frequency power Amplifier. , , 2SB1566(3CA1566) Features Low V ,wide SOA, complements the 2SB1566(3

 8.11. Size:577K  blue-rocket-elect
 2sd2396.pdf

 8.12. Size:794K  semtech
 st2sd2391u.pdf

ST 2SD2391U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Peak Collector Current (PW = 10 ms) ICP 6 A 0.5 Ptot W Total Power Dissipation 2 1) Junction Temperature Tj 150 Storage Temperatu

 8.13. Size:976K  kexin
 2sd2391.pdf

SMD Type Transistors NPN Transistors 2SD2391 1.70 0.1 Features Low saturation voltage Collector-emitter voltage =60V 0.42 0.1 Pc = 2W (on 40X40X0.7mm ceramic board). 0.46 0.1 Complements the 2SB1561. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Volt

 8.14. Size:196K  inchange semiconductor
 2sd2399.pdf

isc Silicon NPN Darlington Power Transistor 2SD2399 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low fr

 8.15. Size:194K  inchange semiconductor
 2sd2395.pdf

isc Silicon NPN Power Transistor 2SD2395 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1566 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.16. Size:185K  inchange semiconductor
 2sd2397.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2397 DESCRIPTION High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Built-in zener diode between collector and base Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor Relay drive ABS

 8.17. Size:184K  inchange semiconductor
 2sd2398.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2398 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor R

 8.18. Size:212K  inchange semiconductor
 2sd2396.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2396 DESCRIPTION Low Collector Saturation Voltage High DC current gain Large collector power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 8.19. Size:209K  inchange semiconductor
 2sd2394.pdf

isc Silicon NPN Power Transistor 2SD2394 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a