2SD2401O Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2401O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 55 MHz
Capacitancia de salida (Cc): 95 pF
Ganancia de corriente contínua (hFE): 5000
Encapsulados: MT200
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2SD2401O datasheet
2sd2401.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2401 DESCRIPTION With MT-200 package Complement to type 2SB1570 DARLINGTON APPLICATIONS Audio, Series Regulator and General Purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum r
2sd2401.pdf
Equivalent circuit C B Darlington 2SD2401 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) Application Audio, Series Regulator and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2401 Symbol Conditions 2SD2401 Unit Unit 0.2 6.0 0.3 36.4 VCBO 160 ICBO VCB=160V
2sd2401.pdf
isc Silicon NPN Darlington Power Transistor 2SD2401 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 7A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1570 Minimum Lot-to-Lot variations for robust device performance and reliable op
Otros transistores... 2SD2387C , 2SD2389O , 2SD2389P , 2SD2389Y , 2SD2390O , 2SD2390P , 2SD2390Y , 2SD24 , 8550 , 2SD2401P , 2SD2401Y , 2SD241 , 2SD242 , 2SD243 , 2SD2438O , 2SD2438P , 2SD2438Y .
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