2SD2401Y Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2401Y

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 55 MHz

Capacitancia de salida (Cc): 95 pF

Ganancia de corriente contínua (hFE): 15000

Encapsulados: MT200

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2SD2401Y datasheet

 7.1. Size:99K  jmnic
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2SD2401Y

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2401 DESCRIPTION With MT-200 package Complement to type 2SB1570 DARLINGTON APPLICATIONS Audio, Series Regulator and General Purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum r

 7.2. Size:24K  sanken-ele
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2SD2401Y

Equivalent circuit C B Darlington 2SD2401 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) Application Audio, Series Regulator and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2401 Symbol Conditions 2SD2401 Unit Unit 0.2 6.0 0.3 36.4 VCBO 160 ICBO VCB=160V

 7.3. Size:206K  inchange semiconductor
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2SD2401Y

isc Silicon NPN Darlington Power Transistor 2SD2401 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 7A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1570 Minimum Lot-to-Lot variations for robust device performance and reliable op

Otros transistores... 2SD2389P, 2SD2389Y, 2SD2390O, 2SD2390P, 2SD2390Y, 2SD24, 2SD2401O, 2SD2401P, TIP42, 2SD241, 2SD242, 2SD243, 2SD2438O, 2SD2438P, 2SD2438Y, 2SD2439O, 2SD2439P