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2SD2439O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD2439O
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 55 MHz
   Capacitancia de salida (Cc): 95 pF
   Ganancia de corriente contínua (hfe): 5000
   Paquete / Cubierta: FM-100

 Búsqueda de reemplazo de transistor bipolar 2SD2439O

 

2SD2439O Datasheet (PDF)

 7.1. Size:82K  jmnic
2sd2439.pdf

2SD2439O 2SD2439O

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2439 DESCRIPTION With TO-3PML package Complement to type 2SB1588 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U

 7.2. Size:25K  sanken-ele
2sd2439.pdf

2SD2439O

Equivalent circuit CBDarlington 2SD2439(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SD2439 Symbol Conditions 2SD2439Unit Unit0.20.2 5.515.6VCBO 160 ICBO VCB=1

 7.3. Size:208K  inchange semiconductor
2sd2439.pdf

2SD2439O 2SD2439O

isc Silicon NPN Darlington Power Transistor 2SD2439DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1588Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

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History: 2N5385 | 2N6531

 

 
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History: 2N5385 | 2N6531

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