2SD25 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2551 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2551 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 5.0 V (Max.) CE (sat) High Speed : t = 1.0 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBO

2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A) CE (sat) C Complementary to 2SB1641 Maximum Ratings (Ta = 25C)

2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 8 V (Max.) CE (sat) High Speed : t = 0.5 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL

2SD2550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2550 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 5.0 V (Max.) CE (sat) High Speed : t = 0.6 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMB

2SD2584 TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 3 A) CE (sat) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-

2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm High DC current gain: 100 (min) Low saturation voltage: V = 0.4 V (typ.) (I = 2 A, I = 0.2 A) CE (sat) C B Complementary to 2SB1640 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-em

2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL

2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mol

2SD2571 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2571 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A) CE (sat) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating

2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.35s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2536 Switching Applications Unit: mm Micro Motor Drive, Hammer Drive Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.2 V (max) CE (sat)(I = 0.7 A, V = 4.2 V) C BH Zener diode included between collector and base. Max

2SD2559 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2559 Horizontal Deflection Output for Color TV Unit: mm High voltage: VCBO = 1500 V Low saturation voltage: V = 5 V (max) CE (sat) Bult-in damper type Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-

2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL

Ordering number:5796NPN Triple Diffused Planar Silicon Transistor2SD2580Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2580] Adoption of MBIT process.16.05.63.4 On-chip damper diode.3.12.82.0 2.01.00.6

Ordering number:5818NPN Triple Diffused Planar Silicon Transistor2SD2581Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2581] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.61 2 31:Base2:Collector

Ordering number:5794NPN Triple Diffused Planar Silicon Transistor2SD2578Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2578] Adoption of MBIT process.16.05.63.4 On-chip damper diode.3.12.82.0 2.01.00.6

Ordering number:5795NPN Triple Diffused Planar Silicon Transistor2SD2579Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SD2579] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.61 2 31:Base2:Collector

DATA SHEETSILICON TRANSISTOR2SD2582AUDIO FREQUENCY AMPLIFIER, SWITCHINGNPN SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS Low VCE(sat)in millimeters (inches)VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) High DC Current Gain8.5 MAX. 2.8 MAX.(0.334 MAX.) (0.110 MAX.)hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A) 3.2 0.2 ( 0.126)ABSOLUTE MAXIMUM RATI

DATA SHEETSILICON TRANSISTOR2SD2583AUDIO FREQUENCY AMPLIFIER, SWITCHINGNOPN SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS Low VCE(sat)in millimeters (inches)VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain8.5 MAX. 2.8 MAX.(0.334 MAX.) (0.110 MAX.)hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) 3.2 0.2 ( 0.126)ABSOLUTE MAXIMUM RAT

2SD2568TransistorsPower Transistor(400V,0.5A)2SD2568 Features1) High breakdown voltage.(BVCEO=400V) Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 400 VCollector-emitter voltage VCEO 400 VEmitter-base voltage VEBO 7 VCollector current IC 0.5 A10Collector power dissipation PC W(Tc=25C)Junction temperature Tj150 CSt

2SD2537Middle Power Transistor (25V / 1.2A)DatasheetlOutlinel SOT-89 Parameter Value SC-62 VCEO25VIC1.2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, Max.VCE(sat)=300mV at IC/IB=500mA/10mA.2)High emitter-base voltage.(VEBO=12V)3)PD=2W (Mounted on a ceramic board(40400.7mm) ).lApplicationl

Transistor2SD2565Silicon NPN triple diffusion planer typeFor high voltage-withstand switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.0.65 max.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automat

Transistor2SD2575Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 15 V0.45 0.1 0.45 0.1Collector to emitter voltage VCEO 10 V1.27 1.27Emitter to bas

Transistor2SD2575Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 15 V0.45 0.1 0.45 0.1Collector to emitter voltage VCEO 10 V1.27 1.27Emitter to bas

Power Transistors2SD2527Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw1.4 0.22.6

Power Transistors2SD2528Silicon NPN epitaxial planar typeFor power amplification with high forward current transfer ratioUnit: mm4.6 0.2Features 9.9 0.32.9 0.2High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFE 3.2 0.1Full-pack package which can be installed to the heat sink withone screw1.4 0.22.6 0.1Ab

Power Transistors2SD2556Silicon NPN epitaxial planer typeUnit: mm6.50.1For power switching2.30.15.30.14.350.10.50.1 Features High forward current transfer ratio hFE Allowing supply with the radial taping1.00.1 Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SD2573Silicon NPN triple diffusion planar typeFor high current amplification, power amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping0.650.1 0.850.10.8 C 0.8 C1.00.1 Absolute Maximum Ratings Ta = 25C0.70.10.70.1Parameter Symbol Rating Uni

Transistors2SD2504Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm5.00.2 4.00.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.70.1 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.45+0.15 0.45+0.15Collector-base voltage (Emitter open) VCBO 15 V0.1 0.12.5+0

Transistor2SD2598Unit: mmSilicon NPN epitaxial planer type2.5 0.11.05darlington6.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency amplification0.65 max.Features Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE+0.1 0.450.05= 4000 to 20000.2.5 0.5 2.5 0.5 A shunt resist

Transistor2SD2598Unit: mmSilicon NPN epitaxial planer type2.5 0.11.05darlington6.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency amplification0.65 max.Features Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE+0.1 0.450.05= 4000 to 20000.2.5 0.5 2.5 0.5 A shunt resist

Transistor2SD2565Silicon NPN triple diffusion planer typeFor high voltage-withstand switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.0.65 max.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automat

Power Transistors2SD2530Silicon NPN triple diffusion planer type DarlingtonUnit: mmFor power amplification10.00.2 5.00.11.00.2 Features High forward current transfer ratio hFE Allowing supply with the radial taping1.20.1C 1.0 Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SD2544Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90Satisfactory linearity of foward current transfer ratio hFEAllowing supply with the radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0

Power Transistors2SD2538Silicon NPN triple diffusion planer type DarlingtonUnit: mmFor power amplification 4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with onescrew1.40.22.60.11.60.2 Absolute Maximum Ratings TC = 25C0.80.1 0.550.15Parameter Symbol

Power Transistors2SD2549Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory4.6 0.29.9 0.32.9 0.2linearityLow collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink with 3.2 0.1one screw1.4 0.2Absolute Maximum Rat

Equivalent circuit CBDarlington 2SD2561(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200SymbolSymbol 2SD2561 Unit Conditions 2SD2561 Unit0.26.00.336.4ICBOVCBO 150 V VCB=150

Equivalent circuit CBDarlington 2SD2562(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)(Ta=25C)Symbol 2SD2562 Unit Symbol Conditions 2SD2562 Unit0.20.2 5.515.6VCBO 150 V ICBO VCB

Darlington 2SD2589Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) External Dimensions FM-25(TO220)(Ta=25C) Electrical CharacteristicsSymbol 2SD2589 Unit Symbol Conditions 2SD2589 Unit0.24.80.210.2VCBO 110 V ICBO VCB=110V 100max A0.12.0IEBO

CEquivalent circuitBDarlington 2SD2558(70)ESilicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2558 Unit Symbol Conditions 2SD2558Unit0.20.2 5.515.60.23.45VCBO 200 V ICBO VCB=200V 100max AI

Equivalent circuit CBDarlington 2SD2557(3.2k)(450)ESilicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose(Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings Electrical Characteristics (Ta=25C)Symbol 2SD2557 Unit Symbol Conditions 2SD2557 Unit0.24.80.415.60.1VCBO 200 V ICBO VCB=200V 100max A

Equivalent circuit CBDarlington 2SD2560(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SD2560 Unit Symbol Conditions 2SD2560Unit0.24.80.415.6VCBO 150 V ICBO VC

2SD2583(BR3DA2583QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features Low saturation voltage, high DC current gain. / Applications Audio frequency amplifier and switching applica

2SD2531(BR3DA2531F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features Low collector saturation voltage, high power dissipation. / Applications Power amplifier applications.

SMD Type TransistorsNPN Transistors2SD25371.70 0.1 Features High DC current gain. High emitter-base voltage. Low saturation voltage.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 9 Col

isc Silicon NPN Power Transistor 2SD2580DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Darlington Power Transistor 2SD2561DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 10A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 10mA)CE(sat) C BComplement to Type 2SB1648Minimum Lot-to-Lot variations for robust deviceperformance and reliable

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD254DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min)(BR) CEOCollector Power Dissipation-: P = 20W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SD2593DESCRIPTIONLow Collector Saturation Voltage-: V = 1.2 (Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60

isc Silicon NPN Power Transistor 2SD2551DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Darlington Power Transistor 2SD2562DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 10A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 10mA)CE(sat) C BComplement to Type 2SB1649Minimum Lot-to-Lot variations for robust deviceperformance and reliable

isc Silicon NPN Power Transistor 2SD2524DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SD2583DESCRIPTIONHigh Collector Current-I = 5ACLow Saturation Voltage -: V = 0.15V(Max)@ I =1A, I = 50mACE(sat) C BHigh DC Current Gain-: h = 150~600@ I = 1AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and switchingapplications.ABSO

isc Silicon NPN Power Transistor 2SD2599DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Darlington Power Transistor 2SD2589DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 5mA)CE(sat) C BComplement to Type 2SB1649Minimum Lot-to-Lot variations for robust deviceperformance and reliable o

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD256DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR) CEOCollector Power Dissipation-: P = 25W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SD2550DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD2581DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

isc Silicon NPN Power Transistor 2SD2539DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon NPN Power Transistor 2SD2553DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TV applicationsHigh speed switching applicat

isc Silicon NPN Power Transistor 2SD2531DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0 (Max)@ I = 2.5ACE(sat) CHigh Power Dissipation-: P = 25W@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD2500DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV horizontal deflection outputapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

isc Silicon NPN Darlington Power Transistor 2SD2558DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC Current Gain-: h = 1500( Min.) @(I = 1A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 1A, I = 5mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

isc Silicon NPN Power Transistor 2SD2559DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD2586DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SD2578DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD2549DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector Saturation Voltgae-: V = 0.7V(Max.)@ I = 3ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN Darlington Power Transistor 2SD2557DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 1A, V = 5VFE C CECollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for series regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN Darlington Power Transistor 2SD2560DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 10A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 10mA)CE(sat) C BComplement to Type 2SB1647Minimum Lot-to-Lot variations for robust deviceperformance and reliable

isc Silicon NPN Power Transistor 2SD2579DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage