2SD261 Todos los transistores

Transistors 2SD261

2SD2614 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 5A) 2SD2614 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to 10.0 4.5 "L" loads. 3.2 2.8 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 1.2 1.3 0.8 0.75 ( ) 2.54 2.54 2.6 (1)

2SD2611 Transistors Power Transistor (80V, 7A) 2SD2611 Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25 C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672. Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collecto

2SD2618 Transistors Power Transistor (80V, 4A) 2SD2618 Features Circuit diagram 1) Darlington connection for a high hFE. C 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. B R 300 R B Base C Collector E E Emitter Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V C

2SD2615 Transistors Power Transistor (120V, 6A) 2SD2615 Features Circuit diagram 1) Darlington connection for high DC current gain. C 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. B R1 R2 E R1 5.0k B Base C Collector R2 300 E Emitter Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector

2SD2616 Transisitors Power Transistor (100V, 5A) 2SD2616 Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25 C) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V 5 A(DC) C