2SD285 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD285

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO66

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2SD285 datasheet

 9.1. Size:33K  wingshing
 2sd288.pdf pdf_icon

2SD285

2SD288 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * TO-220 ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 8 0 V Collector-Emitter Voltage VCEO 55 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25oC) PC 20 W o Junction Temperature Tj 150 C o C Storage Temperat

 9.2. Size:189K  inchange semiconductor
 2sd289.pdf pdf_icon

2SD285

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD289 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Collector Power Dissipation- P = 25W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power regulator, low frequency high power amplifier applications. ABSOLU

 9.3. Size:216K  inchange semiconductor
 2sd288.pdf pdf_icon

2SD285

isc Silicon NPN Power Transistor 2SD288 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Collector Power Dissipation- P = 25W(Max)@ T = 25 C C APPLICATIONS Designed for power regulator, low frequency high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-E

Otros transistores... 2SD271, 2SD272, 2SD273, 2SD274, 2SD28, 2SD280, 2SD283, 2SD284, A1941, 2SD286, 2SD287, 2SD287A, 2SD287B, 2SD287C, 2SD288, 2SD288O, 2SD288R