2SD292 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD292
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO66
Búsqueda de reemplazo de transistor bipolar 2SD292
2SD292 Datasheet (PDF)
2sd2908.pdf
Low VCE(sat) transistor(80V,0.7A) 2SD2908 FEATURES Pb Low VCE(sat). Lead-free Excellent DC current gain characteristics. Complements the 2SB1386 SOT-89ORDERING INFORMATION Type No. Marking Package Code 2SD2908 AHQ/AHR SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UnitsCollector-Base Voltage VCBO 50 VCollector-Emitter Voltag
2sd299.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD299DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 4.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABS
2sd291.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD291DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR) CEOCollector Power Dissipation-: P = 18W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU
2sd2901.pdf
isc Silicon NPN Power Transistor 2SD2901DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 900V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sd297.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD297DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR) CEOCollector Power Dissipation-: P = 25W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
